JPS5423480A - Manufacture for mis type semiconductor element - Google Patents
Manufacture for mis type semiconductor elementInfo
- Publication number
- JPS5423480A JPS5423480A JP8843877A JP8843877A JPS5423480A JP S5423480 A JPS5423480 A JP S5423480A JP 8843877 A JP8843877 A JP 8843877A JP 8843877 A JP8843877 A JP 8843877A JP S5423480 A JPS5423480 A JP S5423480A
- Authority
- JP
- Japan
- Prior art keywords
- manufacture
- type semiconductor
- semiconductor element
- mis type
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000009499 grossing Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To reduce the gate capacitance caused due to the duplication of the gate region and the source and drain regions, by forming the source and drain regions after smoothing the lift up parts at the both ends of gate Si layer formed via the oxide film on a semiconductor substrate with etching.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8843877A JPS5423480A (en) | 1977-07-25 | 1977-07-25 | Manufacture for mis type semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8843877A JPS5423480A (en) | 1977-07-25 | 1977-07-25 | Manufacture for mis type semiconductor element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5423480A true JPS5423480A (en) | 1979-02-22 |
Family
ID=13942793
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8843877A Pending JPS5423480A (en) | 1977-07-25 | 1977-07-25 | Manufacture for mis type semiconductor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5423480A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51100681A (en) * | 1975-03-03 | 1976-09-06 | Nippon Electric Co | ZETSUENBUTSUGEETODENKAIKOKATORANJISUTA |
| JPS5215273A (en) * | 1975-07-28 | 1977-02-04 | Hitachi Ltd | Semiconductor device |
| JPS5326683A (en) * | 1976-08-25 | 1978-03-11 | Hitachi Ltd | Manufacture of semiconductor devic e |
-
1977
- 1977-07-25 JP JP8843877A patent/JPS5423480A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51100681A (en) * | 1975-03-03 | 1976-09-06 | Nippon Electric Co | ZETSUENBUTSUGEETODENKAIKOKATORANJISUTA |
| JPS5215273A (en) * | 1975-07-28 | 1977-02-04 | Hitachi Ltd | Semiconductor device |
| JPS5326683A (en) * | 1976-08-25 | 1978-03-11 | Hitachi Ltd | Manufacture of semiconductor devic e |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS53108390A (en) | Semiconductor device and its manufacture | |
| JPS5375877A (en) | Vertical type micro mos transistor | |
| JPS5423480A (en) | Manufacture for mis type semiconductor element | |
| JPS5331964A (en) | Production of semiconductor substrates | |
| JPS5346288A (en) | Mis type semiconductor device | |
| JPS5292486A (en) | Manufacture of mis-type semiconductor device | |
| JPS531471A (en) | Manufacture for semiconductor device | |
| JPS5412566A (en) | Production of semiconductor device | |
| JPS5370769A (en) | Production of semiconductor device | |
| JPS53144686A (en) | Production of semiconductor device | |
| JPS5591879A (en) | Electrostatic induction type transistor | |
| JPS54879A (en) | Manufacture of mis transistor | |
| JPS53105385A (en) | Manufacture for semiconductor | |
| JPS53112679A (en) | Manufacture for mis type semiconductor device | |
| JPS5263682A (en) | Production of mesa type transistor | |
| JPS5411687A (en) | Manufacture for semiconductor integrated circuit | |
| JPS547867A (en) | Manufacture for semiconductor device | |
| JPS5436190A (en) | Manufacture for semiconductor device | |
| JPS5372473A (en) | Manufacture of mis type semicondctor device | |
| JPS5530873A (en) | High withstand field-effect transistor of mis type | |
| JPS5317286A (en) | Production of semiconductor device | |
| JPS5423479A (en) | Manufacture for field effect transistor of insulation gate type | |
| JPS53145485A (en) | Production of semiconductor device having serrations on semiconductor surface | |
| JPS5429587A (en) | Semiconductor device | |
| JPS52104881A (en) | Manufacture for semiconductor device |