JPS5431279A - Formation method of glass passivation film - Google Patents

Formation method of glass passivation film

Info

Publication number
JPS5431279A
JPS5431279A JP9759277A JP9759277A JPS5431279A JP S5431279 A JPS5431279 A JP S5431279A JP 9759277 A JP9759277 A JP 9759277A JP 9759277 A JP9759277 A JP 9759277A JP S5431279 A JPS5431279 A JP S5431279A
Authority
JP
Japan
Prior art keywords
passivation film
formation method
glass passivation
glass
alkoxysilane
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9759277A
Other languages
Japanese (ja)
Other versions
JPS5436461B2 (en
Inventor
Ryoichi Maekawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP9759277A priority Critical patent/JPS5431279A/en
Publication of JPS5431279A publication Critical patent/JPS5431279A/en
Publication of JPS5436461B2 publication Critical patent/JPS5436461B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Formation Of Insulating Films (AREA)
  • Surface Treatment Of Glass (AREA)

Abstract

PURPOSE: To obtain a passivation film which is free from the defect and can facilitate an easy removal of the unnecessary glass impalpable powder formed on the silicon oxide film, by adding tetra-alkoxysilane to the electrodeposition solution.
COPYRIGHT: (C)1979,JPO&Japio
JP9759277A 1977-08-15 1977-08-15 Formation method of glass passivation film Granted JPS5431279A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9759277A JPS5431279A (en) 1977-08-15 1977-08-15 Formation method of glass passivation film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9759277A JPS5431279A (en) 1977-08-15 1977-08-15 Formation method of glass passivation film

Publications (2)

Publication Number Publication Date
JPS5431279A true JPS5431279A (en) 1979-03-08
JPS5436461B2 JPS5436461B2 (en) 1979-11-09

Family

ID=14196497

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9759277A Granted JPS5431279A (en) 1977-08-15 1977-08-15 Formation method of glass passivation film

Country Status (1)

Country Link
JP (1) JPS5431279A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5929426A (en) * 1982-08-12 1984-02-16 M Setetsuku Kk Device for vitreous electrodeposition
CN104884403A (en) * 2012-12-27 2015-09-02 阿文戈亚太阳能新技术公司 Method for producing an anti-reflective coating for optical and thermoelectrical devices

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5929426A (en) * 1982-08-12 1984-02-16 M Setetsuku Kk Device for vitreous electrodeposition
CN104884403A (en) * 2012-12-27 2015-09-02 阿文戈亚太阳能新技术公司 Method for producing an anti-reflective coating for optical and thermoelectrical devices

Also Published As

Publication number Publication date
JPS5436461B2 (en) 1979-11-09

Similar Documents

Publication Publication Date Title
JPS51124473A (en) Electronic watch
JPS5228871A (en) Method for production of semiconductive device
JPS5213364A (en) Watch cover glass
JPS51114143A (en) Method of indicating images by liquid crystals
JPS5245868A (en) Process for production of plate-from silicone
JPS5419652A (en) Lead bonding method
JPS5289471A (en) Production of semiconductor device
JPS5267271A (en) Formation of through-hole onto semiconductor substrate
JPS52127174A (en) Minute patern formation method
JPS547867A (en) Manufacture for semiconductor device
JPS52117569A (en) Electronic beam exposure unit
JPS543470A (en) Etching method
JPS5367358A (en) Semiconductor device
JPS52155972A (en) Production of semiconductor device
JPS5242366A (en) Method of preventing occurence of crystal defects of silicon wafers
JPS5227368A (en) Selection etching method
JPS5382174A (en) Surface processing method for semiconductor device
JPS51122375A (en) Semiconductor device
JPS5432067A (en) Semiconductor device and its manufacture
JPS5233670A (en) Process for preparation of saccharin
JPS544062A (en) Wafer extender
JPS5394874A (en) Connecting method for semiconductor device
JPS5230169A (en) Method for etching of silicon crystal
JPS53115178A (en) Production of semiconductor device
JPS51115439A (en) Method for preparing 3-hydroxyphenetylamine-2-carboxylic acid