JPS5432184A - Forming apparatus for nitride coating - Google Patents

Forming apparatus for nitride coating

Info

Publication number
JPS5432184A
JPS5432184A JP9821777A JP9821777A JPS5432184A JP S5432184 A JPS5432184 A JP S5432184A JP 9821777 A JP9821777 A JP 9821777A JP 9821777 A JP9821777 A JP 9821777A JP S5432184 A JPS5432184 A JP S5432184A
Authority
JP
Japan
Prior art keywords
nitride coating
forming apparatus
gas
sample
cpd
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9821777A
Other languages
Japanese (ja)
Other versions
JPS5442956B2 (en
Inventor
Masahiro Shibagaki
Takashi Yamazaki
Yasuhiro Horiike
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP9821777A priority Critical patent/JPS5432184A/en
Publication of JPS5432184A publication Critical patent/JPS5432184A/en
Publication of JPS5442956B2 publication Critical patent/JPS5442956B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To provide an apparatus for forming nitride coating on a sample at a relatively low temp., by feeding activated N2 gas formed from gas plasma and a gas contg. Si cpd. separately into a reaction chamber at specific angles respectively to the sample.
JP9821777A 1977-08-18 1977-08-18 Forming apparatus for nitride coating Granted JPS5432184A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9821777A JPS5432184A (en) 1977-08-18 1977-08-18 Forming apparatus for nitride coating

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9821777A JPS5432184A (en) 1977-08-18 1977-08-18 Forming apparatus for nitride coating

Publications (2)

Publication Number Publication Date
JPS5432184A true JPS5432184A (en) 1979-03-09
JPS5442956B2 JPS5442956B2 (en) 1979-12-17

Family

ID=14213795

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9821777A Granted JPS5432184A (en) 1977-08-18 1977-08-18 Forming apparatus for nitride coating

Country Status (1)

Country Link
JP (1) JPS5432184A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63104340A (en) * 1986-10-20 1988-05-09 Nec Corp Method for forming silicon nitride film
EP0120307A3 (en) * 1983-02-25 1989-05-03 Toyota Jidosha Kabushiki Kaisha Apparatus and method for plasma treatment of resin material
JPH0617232A (en) * 1991-11-07 1994-01-25 Hankuk Shinchoru Gankisuru Yongjohabu Si / Zn double-layer plated steel sheet having excellent corrosion resistance and beautiful appearance, and method for producing the same
WO1995019456A1 (en) * 1994-01-14 1995-07-20 Universite Des Sciences Et Technologies De Lille Method for depositing a film consisting of a metal or semi-metal and an oxide thereof
EP0725163A3 (en) * 1995-02-03 1997-05-21 Sharp Kk Online plasma assisted chemical vapor deposition process
WO2002012587A3 (en) * 2000-08-08 2003-03-20 Tokyo Electron Ltd Processing apparatus and cleaning method

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0120307A3 (en) * 1983-02-25 1989-05-03 Toyota Jidosha Kabushiki Kaisha Apparatus and method for plasma treatment of resin material
JPS63104340A (en) * 1986-10-20 1988-05-09 Nec Corp Method for forming silicon nitride film
JPH0617232A (en) * 1991-11-07 1994-01-25 Hankuk Shinchoru Gankisuru Yongjohabu Si / Zn double-layer plated steel sheet having excellent corrosion resistance and beautiful appearance, and method for producing the same
WO1995019456A1 (en) * 1994-01-14 1995-07-20 Universite Des Sciences Et Technologies De Lille Method for depositing a film consisting of a metal or semi-metal and an oxide thereof
FR2715168A1 (en) * 1994-01-14 1995-07-21 Univ Lille Sciences Tech Method for depositing, at room temperature, a layer of metal or semi-metal and their oxide on a substrate.
EP0725163A3 (en) * 1995-02-03 1997-05-21 Sharp Kk Online plasma assisted chemical vapor deposition process
US5908565A (en) * 1995-02-03 1999-06-01 Sharp Kabushiki Kaisha Line plasma vapor phase deposition apparatus and method
WO2002012587A3 (en) * 2000-08-08 2003-03-20 Tokyo Electron Ltd Processing apparatus and cleaning method

Also Published As

Publication number Publication date
JPS5442956B2 (en) 1979-12-17

Similar Documents

Publication Publication Date Title
JPS5391665A (en) Plasma cvd device
JPS53101276A (en) Decompression cvd device
JPS5273270A (en) Cable straining device
JPS53126867A (en) Cvd apparatus
JPS5325604A (en) Gasification of thermal decomposition residues and its apparatus
JPS5368480A (en) Workpiece fixing device
JPS53135843A (en) Etching process for al and al alloy
JPS5363906A (en) Voice recognition device
JPS52136489A (en) Apparatus for blasting inner surface of pipes
JPS52138073A (en) Gas jetting apparatus
JPS51132903A (en) Light transmission apparatus
JPS523741A (en) Pipe for transmitting radiant heat
ES454743A1 (en) Exhaust gas vent tube
JPS5210926A (en) Gas cock fitted with automatic ignition device
JPS5320582A (en) Annealing process of coaxial cable
JPS51131458A (en) A process for treatment of high temperature high pressure exhaust gas
JPS51115160A (en) Gas lighter
JPS5214054A (en) Device for closing a door
JPS51135395A (en) Pulse echo system
JPS524943A (en) Ignition timing correcting device for the negative pressure advance ap paratus
JPS51147244A (en) Adjustment system of coder
JPS51119577A (en) Device of exhausting sawdust
JPS53124173A (en) Gas-phase chemical reaction apparatus
JPS5285982A (en) Reaction furnace
JPS5244110A (en) Receiver