JPS5437482A - Manufacture of semiconductor memory - Google Patents

Manufacture of semiconductor memory

Info

Publication number
JPS5437482A
JPS5437482A JP10270777A JP10270777A JPS5437482A JP S5437482 A JPS5437482 A JP S5437482A JP 10270777 A JP10270777 A JP 10270777A JP 10270777 A JP10270777 A JP 10270777A JP S5437482 A JPS5437482 A JP S5437482A
Authority
JP
Japan
Prior art keywords
semiconductor memory
manufacture
arrayed
unevenness
memories
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10270777A
Other languages
Japanese (ja)
Other versions
JPS6032982B2 (en
Inventor
Yoshiaki Kamigaki
Kiyoo Ito
Yoshifumi Kawamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP52102707A priority Critical patent/JPS6032982B2/en
Publication of JPS5437482A publication Critical patent/JPS5437482A/en
Publication of JPS6032982B2 publication Critical patent/JPS6032982B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Weting (AREA)
  • Semiconductor Memories (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To reduce the unevenness when a number of memories are arrayed in the 2-dimensional way and thus to enhance the integral degree, by regulating the channel length of the transfer region in the semiconductor memory through the side etching.
JP52102707A 1977-08-29 1977-08-29 Manufacturing method of semiconductor memory Expired JPS6032982B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52102707A JPS6032982B2 (en) 1977-08-29 1977-08-29 Manufacturing method of semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52102707A JPS6032982B2 (en) 1977-08-29 1977-08-29 Manufacturing method of semiconductor memory

Publications (2)

Publication Number Publication Date
JPS5437482A true JPS5437482A (en) 1979-03-19
JPS6032982B2 JPS6032982B2 (en) 1985-07-31

Family

ID=14334731

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52102707A Expired JPS6032982B2 (en) 1977-08-29 1977-08-29 Manufacturing method of semiconductor memory

Country Status (1)

Country Link
JP (1) JPS6032982B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56157057A (en) * 1980-04-07 1981-12-04 Texas Instruments Inc Semiconductor memory device and method of manufacturing same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56157057A (en) * 1980-04-07 1981-12-04 Texas Instruments Inc Semiconductor memory device and method of manufacturing same

Also Published As

Publication number Publication date
JPS6032982B2 (en) 1985-07-31

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