JPS5443679A - Thermal oxidation method of semiconductor device - Google Patents
Thermal oxidation method of semiconductor deviceInfo
- Publication number
- JPS5443679A JPS5443679A JP10988277A JP10988277A JPS5443679A JP S5443679 A JPS5443679 A JP S5443679A JP 10988277 A JP10988277 A JP 10988277A JP 10988277 A JP10988277 A JP 10988277A JP S5443679 A JPS5443679 A JP S5443679A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- oxide film
- air pressure
- generated
- defects
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE: To obtain an oxide film where crystal defects are prevented from being generated and the life time is not damaged by washing, by heating the semiconductor substrate surface in an oxidazing atmosphere of an air pressure 1 to 10 including a halogen element or halogen compound over 700°C at a thermal oxidation time of this surface.
CONSTITUTION: Though P type Si substrate 1 is prepared and the surface is subjected to mirror finishing, minute defects 2 which will be the core of crystal defect generation are distributed uniformly inside the substrate. Next, this substrate 1 is subjected to heat treatment in dry exygen including HCl under conditions of a temperature over 700°C and an air pressure of 1 to 10, thereby growing oxide film 3. Thus, the surface of substrate 1 has not crystal defects, and indefective area 4 is generated just under the substrate surface. After that, though thick field oxide film 5 is formed at both edges of substrate 1, this operation is performed in vapour including HCl under conditions of the same temperature and air pressure as the above. Further, thin gate oxide film 7 is grown on the surface of substrate 1 surrounded by film 5, defects are not generated in area 4 just under films 5 and 7.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10988277A JPS5443679A (en) | 1977-09-14 | 1977-09-14 | Thermal oxidation method of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10988277A JPS5443679A (en) | 1977-09-14 | 1977-09-14 | Thermal oxidation method of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5443679A true JPS5443679A (en) | 1979-04-06 |
Family
ID=14521545
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10988277A Pending JPS5443679A (en) | 1977-09-14 | 1977-09-14 | Thermal oxidation method of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5443679A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0837183A (en) * | 1995-01-19 | 1996-02-06 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
| EP1193748A1 (en) * | 2000-08-01 | 2002-04-03 | Texas Instruments Inc. | Silicon oxidation method for reduction of the charge trap concentration at the silicon-oxide interface |
-
1977
- 1977-09-14 JP JP10988277A patent/JPS5443679A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0837183A (en) * | 1995-01-19 | 1996-02-06 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
| EP1193748A1 (en) * | 2000-08-01 | 2002-04-03 | Texas Instruments Inc. | Silicon oxidation method for reduction of the charge trap concentration at the silicon-oxide interface |
| US6797644B2 (en) | 2000-08-01 | 2004-09-28 | Texas Instruments Incorporated | Method to reduce charge interface traps and channel hot carrier degradation |
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