JPS544583A - Production of cdse photoconductive film - Google Patents

Production of cdse photoconductive film

Info

Publication number
JPS544583A
JPS544583A JP6938777A JP6938777A JPS544583A JP S544583 A JPS544583 A JP S544583A JP 6938777 A JP6938777 A JP 6938777A JP 6938777 A JP6938777 A JP 6938777A JP S544583 A JPS544583 A JP S544583A
Authority
JP
Japan
Prior art keywords
cdse
photoconductive film
production
cdse photoconductive
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6938777A
Other languages
Japanese (ja)
Other versions
JPS5441475B2 (en
Inventor
Nobuyoshi Takagi
Fumiaki Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP6938777A priority Critical patent/JPS544583A/en
Publication of JPS544583A publication Critical patent/JPS544583A/en
Publication of JPS5441475B2 publication Critical patent/JPS5441475B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Light Receiving Elements (AREA)

Abstract

PURPOSE: To improve sensitivity and temperatue characteristics by letting CdSe and Te evaporate from separated vapor sources while maintaining a substrate at above re-evapoation temperature of Te at the time of forming a photoconductive film through heat treatment in a N2 atmosphere after evaporating CdSe and Te simultaneously on the substrate surface.
COPYRIGHT: (C)1979,JPO&Japio
JP6938777A 1977-06-14 1977-06-14 Production of cdse photoconductive film Granted JPS544583A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6938777A JPS544583A (en) 1977-06-14 1977-06-14 Production of cdse photoconductive film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6938777A JPS544583A (en) 1977-06-14 1977-06-14 Production of cdse photoconductive film

Publications (2)

Publication Number Publication Date
JPS544583A true JPS544583A (en) 1979-01-13
JPS5441475B2 JPS5441475B2 (en) 1979-12-08

Family

ID=13401120

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6938777A Granted JPS544583A (en) 1977-06-14 1977-06-14 Production of cdse photoconductive film

Country Status (1)

Country Link
JP (1) JPS544583A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4010933A4 (en) * 2019-08-08 2023-05-03 China Triumph International Engineering Co., Ltd. METHOD FOR DEPOSITING A LAYER OF HIGH-QUALITY THIN-FILM ABSORBER

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4010933A4 (en) * 2019-08-08 2023-05-03 China Triumph International Engineering Co., Ltd. METHOD FOR DEPOSITING A LAYER OF HIGH-QUALITY THIN-FILM ABSORBER

Also Published As

Publication number Publication date
JPS5441475B2 (en) 1979-12-08

Similar Documents

Publication Publication Date Title
JPS544583A (en) Production of cdse photoconductive film
JPS53123667A (en) Generator for semiconuctor oxidized film
JPS524167A (en) Manufacturing process of p-n junction type solid element
JPS52182A (en) Method of forming planar type fet electrodes
JPS5269270A (en) Coating method of photoresist
JPS5260989A (en) Manufacturing of dielectric thin film
JPS5267838A (en) High frequency heater
JPS52101991A (en) Preparation of silicon target
JPS5260986A (en) Manufacturing of dielectric thin film
JPS53118990A (en) Manufacture for resistor
JPS52127753A (en) Production of cadmium sulfide monocrystal film
JPS5378777A (en) Semiconductor device
JPS5217503A (en) Apparatus for trapping fuel vapor
JPS5395570A (en) Forming method of epitaxial layer
JPS5260992A (en) Manufacturing of dielectric thin film
JPS53115095A (en) Preparation of porcelain electron articles
JPS5279771A (en) Forming method for electrodes of semiconductor device
JPS5348683A (en) Production of photoconductive film
JPS5260995A (en) Manufacturing of dielectric thin film
JPS53123668A (en) Generator for semiconuctor oxidized film
JPS5418670A (en) Manufacture of semiconductor device
JPS53127290A (en) Manufacture for photo conductive film
JPS5260996A (en) Manufacturingend of dielectric thin film
JPS533167A (en) Semiconductor evaporating apparatus
JPS5218324A (en) Method of forming photosensitive material by vacuum evaporation of car otenoid