JPS5448168A - Manufacture of porous silicon oxide film - Google Patents

Manufacture of porous silicon oxide film

Info

Publication number
JPS5448168A
JPS5448168A JP11455977A JP11455977A JPS5448168A JP S5448168 A JPS5448168 A JP S5448168A JP 11455977 A JP11455977 A JP 11455977A JP 11455977 A JP11455977 A JP 11455977A JP S5448168 A JPS5448168 A JP S5448168A
Authority
JP
Japan
Prior art keywords
film
porous
substrate
formation
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11455977A
Other languages
Japanese (ja)
Inventor
Kazuo Imai
Yutaka Yoriume
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP11455977A priority Critical patent/JPS5448168A/en
Publication of JPS5448168A publication Critical patent/JPS5448168A/en
Pending legal-status Critical Current

Links

Landscapes

  • Formation Of Insulating Films (AREA)
  • Local Oxidation Of Silicon (AREA)

Abstract

PURPOSE: To ensure formation of a minute porous Si pattern by preventing occurrence of the stage error caused by the defect and the uneven surface of the Si substrate, and thus to obrain a highly integrated circuit with a high density.
CONSTITUTION: First, SiO2 film 2 is provided on the surface of p-type Si substrate 1 featuring the specific resistance value of several Ω-cm, with part of the substrate surface is left uncovered with film 2, and SiN film 3 is coated on film 2. Then the area where no film 2 nor 3 is coated on substrate 1 is changed to porous Si film 4 through the anode formation method using the hydrofluoric acid as the formation solution. The whole test sample is then put into an oxidation atmosphere, and Si film 4 is changed to porous Si oxide film 5 through oxidation. Finally, film 3 is removed. And n-type region 6 to be the source region or the drain region, gate insulator film 7 and gate electrode 8, contact hole 9 which is contained in the source region or the drain region, and metal wiring 10 are formed, thus a MIS-type integrated circuit being formed. In this way, the concentration of the hydrofluoric acid of the formation solution is set to a fixed value when the anode is formed to control the density of the porous Si contained in the porous SiO2 film obtained
COPYRIGHT: (C)1979,JPO&Japio
JP11455977A 1977-09-26 1977-09-26 Manufacture of porous silicon oxide film Pending JPS5448168A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11455977A JPS5448168A (en) 1977-09-26 1977-09-26 Manufacture of porous silicon oxide film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11455977A JPS5448168A (en) 1977-09-26 1977-09-26 Manufacture of porous silicon oxide film

Publications (1)

Publication Number Publication Date
JPS5448168A true JPS5448168A (en) 1979-04-16

Family

ID=14640828

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11455977A Pending JPS5448168A (en) 1977-09-26 1977-09-26 Manufacture of porous silicon oxide film

Country Status (1)

Country Link
JP (1) JPS5448168A (en)

Similar Documents

Publication Publication Date Title
JPS56134757A (en) Complementary type mos semiconductor device and its manufacture
JPS577959A (en) Semiconductor device
JPS5736842A (en) Semiconductor integrated circuit device
JPS5643749A (en) Semiconductor device and its manufacture
JPS56125844A (en) Manufacture of semiconductor element
JPS5448168A (en) Manufacture of porous silicon oxide film
JPS5578532A (en) Formation of electrode for semiconductor device
JPS57186339A (en) Etching method for silicon
JPS56125847A (en) Surface treatment of semiconductor
JPS56147434A (en) Manufacture of semiconductor device
JPS5526624A (en) Semiconductor device
JPS54117690A (en) Production of semiconductor device
JPS56133844A (en) Semiconductor device
JPS56111264A (en) Manufacture of semiconductor device
JPS5588337A (en) Manufacture of semiconductor device
JPS5759378A (en) Manufacture of semiconductor device
JPS559477A (en) Method of making semiconductor device
JPS6484643A (en) Manufacture of semiconductor device
JPS5493966A (en) Production of 3-5 group compound semiconductor device
JPS5491068A (en) Manufacture of semiconductor device
JPS5513952A (en) Manufacturing method of semiconductor device
JPS554967A (en) Manufacture of semiconductor
JPS54131873A (en) Manufacture of semiconductor device
JPS5627924A (en) Semiconductor device and its manufacture
JPS51120668A (en) Semiconductor device manufacturing method