JPS5451832A - Photomask material - Google Patents

Photomask material

Info

Publication number
JPS5451832A
JPS5451832A JP11768377A JP11768377A JPS5451832A JP S5451832 A JPS5451832 A JP S5451832A JP 11768377 A JP11768377 A JP 11768377A JP 11768377 A JP11768377 A JP 11768377A JP S5451832 A JPS5451832 A JP S5451832A
Authority
JP
Japan
Prior art keywords
film
chromium
substrate
films
electrically conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11768377A
Other languages
Japanese (ja)
Other versions
JPS5756068B2 (en
Inventor
Kunio Sakurai
Kunio Masumoto
Hiroshi Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Konica Minolta Inc
Original Assignee
Konica Minolta Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Konica Minolta Inc filed Critical Konica Minolta Inc
Priority to JP11768377A priority Critical patent/JPS5451832A/en
Publication of JPS5451832A publication Critical patent/JPS5451832A/en
Publication of JPS5756068B2 publication Critical patent/JPS5756068B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

PURPOSE: To form a reflection preventing thin photmask material which has superior film characteristics and is not charged with static electricity, by superposing chromium films and a chromium oxide film by use of specific methods on a substrate covered with a transparent electrically conductive film.
CONSTITUTION: Transparent electrically conductive film 2 made of indium oxide, tin oxide, etc. with a surface resistance less than about 10 KΩ/square is formed on transparent substrate 1. On substrate 1, about 200W800Å thick chromium film 3, about 100W300Å thick chromium film 4 and about 150W400Å thick chromium oxide film 5 are successively formed in layers by sputtering, vacuum deposition and vacuum deposition, respectively. The total light transmission density of films 3,4 is desirable to be a value above 2.5 and near 2.5 in respect of resolving power
COPYRIGHT: (C)1979,JPO&Japio
JP11768377A 1977-09-30 1977-09-30 Photomask material Granted JPS5451832A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11768377A JPS5451832A (en) 1977-09-30 1977-09-30 Photomask material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11768377A JPS5451832A (en) 1977-09-30 1977-09-30 Photomask material

Publications (2)

Publication Number Publication Date
JPS5451832A true JPS5451832A (en) 1979-04-24
JPS5756068B2 JPS5756068B2 (en) 1982-11-27

Family

ID=14717697

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11768377A Granted JPS5451832A (en) 1977-09-30 1977-09-30 Photomask material

Country Status (1)

Country Link
JP (1) JPS5451832A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5739490U (en) * 1980-08-18 1982-03-03
JPS5741638A (en) * 1980-08-25 1982-03-08 Fujitsu Ltd Photomask for electron beam
JPS5849945A (en) * 1981-08-31 1983-03-24 Konishiroku Photo Ind Co Ltd Manufacture of photomask material
US4440841A (en) * 1981-02-28 1984-04-03 Dai Nippon Insatsu Kabushiki Kaisha Photomask and photomask blank
US4556608A (en) * 1980-10-09 1985-12-03 Dai Nippon Insatsu Kabushiki Kaisha Photomask blank and photomask
US4563407A (en) * 1982-11-16 1986-01-07 Hoya Corporation Photo-mask blank comprising a shading layer having a variable etch rate

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5739490U (en) * 1980-08-18 1982-03-03
JPS5741638A (en) * 1980-08-25 1982-03-08 Fujitsu Ltd Photomask for electron beam
US4556608A (en) * 1980-10-09 1985-12-03 Dai Nippon Insatsu Kabushiki Kaisha Photomask blank and photomask
US4440841A (en) * 1981-02-28 1984-04-03 Dai Nippon Insatsu Kabushiki Kaisha Photomask and photomask blank
JPS5849945A (en) * 1981-08-31 1983-03-24 Konishiroku Photo Ind Co Ltd Manufacture of photomask material
US4563407A (en) * 1982-11-16 1986-01-07 Hoya Corporation Photo-mask blank comprising a shading layer having a variable etch rate

Also Published As

Publication number Publication date
JPS5756068B2 (en) 1982-11-27

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