JPS5453972A - Reverse conducting thyristor - Google Patents
Reverse conducting thyristorInfo
- Publication number
- JPS5453972A JPS5453972A JP12078877A JP12078877A JPS5453972A JP S5453972 A JPS5453972 A JP S5453972A JP 12078877 A JP12078877 A JP 12078877A JP 12078877 A JP12078877 A JP 12078877A JP S5453972 A JPS5453972 A JP S5453972A
- Authority
- JP
- Japan
- Prior art keywords
- scr
- region
- gate electrode
- auxiliary
- reverse conducting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
- H10D84/131—Thyristors having built-in components
- H10D84/135—Thyristors having built-in components the built-in components being diodes
- H10D84/136—Thyristors having built-in components the built-in components being diodes in anti-parallel configurations, e.g. reverse current thyristor [RCT]
Landscapes
- Thyristors (AREA)
Abstract
PURPOSE:To manufacture reverse conducting SCR, by providing the auxiliary SCR including the gate electrode in the SCR region on one substrate and by locating the gate electrode adjacent to the diode region in the separation region. CONSTITUTION:The auxiliary SCR is located including the gate electrode 3, between the diode region 2 and the SCR region 1. By locating the gate electrode 3 near the part of the diode region, the separation region 3 is substantially formed between the diode region 2 and the auxiliary SCR. With this construction, since the charge not desired in the separation region can effectively be removed with the operation of the gate electrode, no commutation failure can be almost caused. Further, the commutation failure is caused at the auxiliary SCR part and triggering is mad the same as normal trigger mode, then the distruction of SCR due to mis-triggering can be avoided.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12078877A JPS5453972A (en) | 1977-10-07 | 1977-10-07 | Reverse conducting thyristor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12078877A JPS5453972A (en) | 1977-10-07 | 1977-10-07 | Reverse conducting thyristor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5453972A true JPS5453972A (en) | 1979-04-27 |
Family
ID=14795004
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12078877A Pending JPS5453972A (en) | 1977-10-07 | 1977-10-07 | Reverse conducting thyristor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5453972A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5596678A (en) * | 1979-01-18 | 1980-07-23 | Toyo Electric Mfg Co Ltd | Reverse conducting thyristor |
| JPS60194563A (en) * | 1984-03-16 | 1985-10-03 | Toshiba Corp | Reverse conduction gate turn off thyristor device |
| JPS6287457U (en) * | 1985-11-19 | 1987-06-04 | ||
| JPS63202968A (en) * | 1987-02-18 | 1988-08-22 | Meidensha Electric Mfg Co Ltd | Reverse conducting gate turn-off thyristor |
| US4791470A (en) * | 1984-06-12 | 1988-12-13 | Kabushiki Kaisha Toshiba | Reverse conducting gate turn-off thyristor device |
-
1977
- 1977-10-07 JP JP12078877A patent/JPS5453972A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5596678A (en) * | 1979-01-18 | 1980-07-23 | Toyo Electric Mfg Co Ltd | Reverse conducting thyristor |
| JPS60194563A (en) * | 1984-03-16 | 1985-10-03 | Toshiba Corp | Reverse conduction gate turn off thyristor device |
| US4791470A (en) * | 1984-06-12 | 1988-12-13 | Kabushiki Kaisha Toshiba | Reverse conducting gate turn-off thyristor device |
| JPS6287457U (en) * | 1985-11-19 | 1987-06-04 | ||
| JPS63202968A (en) * | 1987-02-18 | 1988-08-22 | Meidensha Electric Mfg Co Ltd | Reverse conducting gate turn-off thyristor |
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