JPS5368986A - Mos type transistor - Google Patents

Mos type transistor

Info

Publication number
JPS5368986A
JPS5368986A JP14440976A JP14440976A JPS5368986A JP S5368986 A JPS5368986 A JP S5368986A JP 14440976 A JP14440976 A JP 14440976A JP 14440976 A JP14440976 A JP 14440976A JP S5368986 A JPS5368986 A JP S5368986A
Authority
JP
Japan
Prior art keywords
type transistor
mos type
insulator
laminating
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14440976A
Other languages
Japanese (ja)
Inventor
Toru Furuyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP14440976A priority Critical patent/JPS5368986A/en
Publication of JPS5368986A publication Critical patent/JPS5368986A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/611—Insulated-gate field-effect transistors [IGFET] having multiple independently-addressable gate electrodes influencing the same channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE: To increase switching speed while maintaining required transistor performances and reduce power consumption by dividing a gate electrode to a plurality and laminating the whole or part of these electrodes through an insulator.
COPYRIGHT: (C)1978,JPO&Japio
JP14440976A 1976-12-01 1976-12-01 Mos type transistor Pending JPS5368986A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14440976A JPS5368986A (en) 1976-12-01 1976-12-01 Mos type transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14440976A JPS5368986A (en) 1976-12-01 1976-12-01 Mos type transistor

Publications (1)

Publication Number Publication Date
JPS5368986A true JPS5368986A (en) 1978-06-19

Family

ID=15361490

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14440976A Pending JPS5368986A (en) 1976-12-01 1976-12-01 Mos type transistor

Country Status (1)

Country Link
JP (1) JPS5368986A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS586175A (en) * 1981-07-02 1983-01-13 Seiko Epson Corp semiconductor equipment
US4651186A (en) * 1981-11-18 1987-03-17 Mitsubishi Denki Kabushiki Kaisha Field effect transistor with improved withstand voltage characteristic
US5159417A (en) * 1990-04-16 1992-10-27 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having short channel field effect transistor with extended gate electrode structure and manufacturing method thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS586175A (en) * 1981-07-02 1983-01-13 Seiko Epson Corp semiconductor equipment
US4651186A (en) * 1981-11-18 1987-03-17 Mitsubishi Denki Kabushiki Kaisha Field effect transistor with improved withstand voltage characteristic
US5159417A (en) * 1990-04-16 1992-10-27 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having short channel field effect transistor with extended gate electrode structure and manufacturing method thereof

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