JPS5457973A - Semiconductor device for switching control - Google Patents

Semiconductor device for switching control

Info

Publication number
JPS5457973A
JPS5457973A JP12411677A JP12411677A JPS5457973A JP S5457973 A JPS5457973 A JP S5457973A JP 12411677 A JP12411677 A JP 12411677A JP 12411677 A JP12411677 A JP 12411677A JP S5457973 A JPS5457973 A JP S5457973A
Authority
JP
Japan
Prior art keywords
layer
electrode
under
resistance
control electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12411677A
Other languages
Japanese (ja)
Inventor
Mikio Hatakeyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP12411677A priority Critical patent/JPS5457973A/en
Publication of JPS5457973A publication Critical patent/JPS5457973A/en
Pending legal-status Critical Current

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  • Thyristors (AREA)

Abstract

PURPOSE: To produce a device where the turn-off time can be shortened or the gate turn-off of the main current is possible by the reverse bias of the gate even in an amplifying gate-system SCR.
CONSTITUTION: In a PENBPBNE four-layer structure, control electrode 118 is surrounded by cathode 116, and auxiliary electrode 117 is intermediate between them. N-type auxiliary emitter layer 115 is formed under electrode 117 partially, and N layer 120 is formed under electrode 118 partially, and groove 121 is formed in PB layer 113 which extends from layer 120 to layer 115 opposite to layer 120. When anode 110 is defined as positive and the control electrode is defined as positive in respect to the cathode, the amplifying gate function effects normally to turn on because resistance RS of PB layer under groove 121 is large. When the control electrode is defined as negative in respect to the cathode, PB layer resistance R2 under electrode 117 is approximately the tenth of PB layer resistance R1 under auxiliary Ne layer 115, and PB layer resistance R3 under groove 121 is ten times as large as R2. As a result, the residual carrier does not generate minority carrier injection from the auxiliary emitter, and the residual carrier is led out from the control electrode through R2, therby turning off in a short time
COPYRIGHT: (C)1979,JPO&Japio
JP12411677A 1977-10-18 1977-10-18 Semiconductor device for switching control Pending JPS5457973A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12411677A JPS5457973A (en) 1977-10-18 1977-10-18 Semiconductor device for switching control

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12411677A JPS5457973A (en) 1977-10-18 1977-10-18 Semiconductor device for switching control

Publications (1)

Publication Number Publication Date
JPS5457973A true JPS5457973A (en) 1979-05-10

Family

ID=14877313

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12411677A Pending JPS5457973A (en) 1977-10-18 1977-10-18 Semiconductor device for switching control

Country Status (1)

Country Link
JP (1) JPS5457973A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57204163A (en) * 1981-06-11 1982-12-14 Toyo Electric Mfg Co Ltd Semiconductor device
JPS62210675A (en) * 1986-03-05 1987-09-16 シ−メンス、アクチエンゲゼルシヤフト Thyristor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57204163A (en) * 1981-06-11 1982-12-14 Toyo Electric Mfg Co Ltd Semiconductor device
JPS62210675A (en) * 1986-03-05 1987-09-16 シ−メンス、アクチエンゲゼルシヤフト Thyristor

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