JPS649659A - Semiconductor element - Google Patents

Abstract

PURPOSE:To cut down the turn off time as in GTO for accelerating the response speed by a method wherein a Schottky electrode is formed on a semiconductor layer in a PNPN semiconductor element to be connected to another electrode formed in another semiconductor layer inside a semiconductor element. CONSTITUTION:A Schottky electrode 10 is formed on an N type gate layer 12 comprising a semiconductor layer while the Schottky electrode 10 is connected to a cathode 14 formed into the semiconductor layer inside a semiconductor element. The electrons in the gate layer 12 are attracted to the cathode side through the Schottky electrode 10 formed on the gate layer 12. When the electrons are attracted to the cathode side, holes in a P type gate layer 13 are dragged into the N type gate layer 13 to maintain the electric neutrarity later to be diminished forthwith as minor carriers. Thus, the turn off time can be cut down. The reasons why the Schottky diode is adopted are as follows, i.e., 1) the Schottky diode itself can be operated at higher speed than that of PN diode 2) it can be manufactured easily and 3) building up voltage in the normal direction is low.