JPS5459077A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5459077A
JPS5459077A JP12512677A JP12512677A JPS5459077A JP S5459077 A JPS5459077 A JP S5459077A JP 12512677 A JP12512677 A JP 12512677A JP 12512677 A JP12512677 A JP 12512677A JP S5459077 A JPS5459077 A JP S5459077A
Authority
JP
Japan
Prior art keywords
wiring
source
manufacture
semiconductor device
treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12512677A
Other languages
Japanese (ja)
Other versions
JPS5846052B2 (en
Inventor
Naoki Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP52125126A priority Critical patent/JPS5846052B2/en
Publication of JPS5459077A publication Critical patent/JPS5459077A/en
Publication of JPS5846052B2 publication Critical patent/JPS5846052B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To prevent occurrence of pits to the shallow impurity layer by laminating the polycrystal or noncrystal Si via the metal which forms the intra-metal compound with Si in order to form the si source which is used as the diffusion source to the Al wiring.
CONSTITUTION: As diffusion layer 2 of 0.2μm is formed on p-type si substrate 1 with an opening provided to the oxide film 3, and the Rh4 deposition film of about 50nm is sticked to only the opening. Then poly si6 is coated through CVD and at 650°C to obtain the Rh silicide. Al is then deposited to form wiring 7 through etching. In such way, the backward current after the Cl treatment of 5 hours and at 500°C is identical to that before treatment, featuring about 10-15A.μm-2. Thus, the heat resistance can be enhanced
COPYRIGHT: (C)1979,JPO&Japio
JP52125126A 1977-10-20 1977-10-20 Manufacturing method of semiconductor device Expired JPS5846052B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52125126A JPS5846052B2 (en) 1977-10-20 1977-10-20 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52125126A JPS5846052B2 (en) 1977-10-20 1977-10-20 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5459077A true JPS5459077A (en) 1979-05-12
JPS5846052B2 JPS5846052B2 (en) 1983-10-14

Family

ID=14902480

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52125126A Expired JPS5846052B2 (en) 1977-10-20 1977-10-20 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5846052B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59205717A (en) * 1983-04-25 1984-11-21 シ−メンス、アクチエンゲゼルシヤフト Low resistance contact generating method of semiconductror integrated circuit
JPS61220468A (en) * 1985-03-27 1986-09-30 Hitachi Ltd semiconductor equipment
JPS61230373A (en) * 1985-04-05 1986-10-14 Seiko Epson Corp Manufacture of semiconductor device
JPS627165A (en) * 1985-07-03 1987-01-14 Hitachi Ltd Manufacture of semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS519574A (en) * 1974-07-12 1976-01-26 Fujitsu Ltd Handotaisochino seizohoho

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS519574A (en) * 1974-07-12 1976-01-26 Fujitsu Ltd Handotaisochino seizohoho

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59205717A (en) * 1983-04-25 1984-11-21 シ−メンス、アクチエンゲゼルシヤフト Low resistance contact generating method of semiconductror integrated circuit
JPS61220468A (en) * 1985-03-27 1986-09-30 Hitachi Ltd semiconductor equipment
JPS61230373A (en) * 1985-04-05 1986-10-14 Seiko Epson Corp Manufacture of semiconductor device
JPS627165A (en) * 1985-07-03 1987-01-14 Hitachi Ltd Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS5846052B2 (en) 1983-10-14

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