JPS5478659A - Menufacture of semiconductor device - Google Patents

Menufacture of semiconductor device

Info

Publication number
JPS5478659A
JPS5478659A JP14624477A JP14624477A JPS5478659A JP S5478659 A JPS5478659 A JP S5478659A JP 14624477 A JP14624477 A JP 14624477A JP 14624477 A JP14624477 A JP 14624477A JP S5478659 A JPS5478659 A JP S5478659A
Authority
JP
Japan
Prior art keywords
film
coated
selectively
insulating film
connection hole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14624477A
Other languages
Japanese (ja)
Inventor
Hidenobu Ishikura
Hiroji Harada
Shinichi Sato
Hisao Yakushiji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP14624477A priority Critical patent/JPS5478659A/en
Publication of JPS5478659A publication Critical patent/JPS5478659A/en
Pending legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To prevent the electrode penetration by forming the silicide metal wider than the connection hole of the insulating film.
CONSTITUTION: Insulating film 3 is given an opening on diffusion layer 2 of Si substrate 1, and poly Si film 8 is coated selectively up to film 3 at the periphery of the opening. Then Pt film 10 is coated to form PtSi4 selectively after a heat treatment. The Pt film is then removed with the mixture solution of the hydrochloric acid and nitric acid, and the surface of film 4 is etched softly with the fluoric acid group etching solution to remove the lower-class oxide. Then Al 5 is formed selectively. In such structure, the thin part of the insulating film around the connection hole is coated with PtSi, thus preventing the penetration of the wiring electrode.
COPYRIGHT: (C)1979,JPO&Japio
JP14624477A 1977-12-05 1977-12-05 Menufacture of semiconductor device Pending JPS5478659A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14624477A JPS5478659A (en) 1977-12-05 1977-12-05 Menufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14624477A JPS5478659A (en) 1977-12-05 1977-12-05 Menufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5478659A true JPS5478659A (en) 1979-06-22

Family

ID=15403343

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14624477A Pending JPS5478659A (en) 1977-12-05 1977-12-05 Menufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5478659A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56167331A (en) * 1980-05-28 1981-12-23 Sony Corp Manufacture of semiconductor device
JPS5994820A (en) * 1982-11-22 1984-05-31 Nec Corp Manufacture of semiconductor device
JPS61248525A (en) * 1985-04-26 1986-11-05 Toshiba Corp Manufacture of semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56167331A (en) * 1980-05-28 1981-12-23 Sony Corp Manufacture of semiconductor device
JPS5994820A (en) * 1982-11-22 1984-05-31 Nec Corp Manufacture of semiconductor device
JPS61248525A (en) * 1985-04-26 1986-11-05 Toshiba Corp Manufacture of semiconductor device

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