JPS54591A - Element isolating method - Google Patents
Element isolating methodInfo
- Publication number
- JPS54591A JPS54591A JP6482477A JP6482477A JPS54591A JP S54591 A JPS54591 A JP S54591A JP 6482477 A JP6482477 A JP 6482477A JP 6482477 A JP6482477 A JP 6482477A JP S54591 A JPS54591 A JP S54591A
- Authority
- JP
- Japan
- Prior art keywords
- element isolating
- isolating method
- burying
- sio
- vapor deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000010884 ion-beam technique Methods 0.000 abstract 1
- 238000002955 isolation Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 238000007740 vapor deposition Methods 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
Landscapes
- Element Separation (AREA)
Abstract
PURPOSE: To obtain isolating regions of good flatness by providing holes of a depth sufficient for interelement isolation within a semiconductor substrate from the substrate surface and burying here with SiO2, Si3N4, Al2O3 or other by using a laser beam or ion beam vapor deposition or a plasma chemical transport method.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6482477A JPS54591A (en) | 1977-06-03 | 1977-06-03 | Element isolating method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6482477A JPS54591A (en) | 1977-06-03 | 1977-06-03 | Element isolating method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS54591A true JPS54591A (en) | 1979-01-05 |
Family
ID=13269377
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6482477A Pending JPS54591A (en) | 1977-06-03 | 1977-06-03 | Element isolating method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54591A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57176742A (en) * | 1981-04-21 | 1982-10-30 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device and manufacture thereof |
| JPS57202755A (en) * | 1982-04-12 | 1982-12-11 | Toshiba Corp | Manufacture of semiconductor device |
| JPS58202546A (en) * | 1982-05-21 | 1983-11-25 | Mitsubishi Electric Corp | Formation of element isolation film |
| JPS59117234A (en) * | 1982-12-24 | 1984-07-06 | Mitsubishi Electric Corp | Formation of isolation film between elements |
-
1977
- 1977-06-03 JP JP6482477A patent/JPS54591A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57176742A (en) * | 1981-04-21 | 1982-10-30 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device and manufacture thereof |
| JPS57202755A (en) * | 1982-04-12 | 1982-12-11 | Toshiba Corp | Manufacture of semiconductor device |
| JPS58202546A (en) * | 1982-05-21 | 1983-11-25 | Mitsubishi Electric Corp | Formation of element isolation film |
| JPS59117234A (en) * | 1982-12-24 | 1984-07-06 | Mitsubishi Electric Corp | Formation of isolation film between elements |
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