JPS5459873A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5459873A
JPS5459873A JP12036678A JP12036678A JPS5459873A JP S5459873 A JPS5459873 A JP S5459873A JP 12036678 A JP12036678 A JP 12036678A JP 12036678 A JP12036678 A JP 12036678A JP S5459873 A JPS5459873 A JP S5459873A
Authority
JP
Japan
Prior art keywords
serrated parts
impurity
regions
forming
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12036678A
Other languages
Japanese (ja)
Inventor
Shoei Kokubu
Keizo Inaba
Tadahisa Morita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP12036678A priority Critical patent/JPS5459873A/en
Publication of JPS5459873A publication Critical patent/JPS5459873A/en
Pending legal-status Critical Current

Links

Landscapes

  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE: To make mask alignment at the time of further forming diffused regions within diffused regions accurate by providing depressions having serrated parts on a semiconductor substrate, forming impurity diffused regions there and growing an oxide film over the entire surface to produce the serrated parts of the film on the serrated parts and using these as marks of photo masks.
CONSTITUTION: After a photo resist film 2 is coated on a semiconductor substrate, it is removed of required regions and etching is performed to form depressions having serrated parts 5 in the exposed substrate 1. Next, an impurity of a conductivity type different from that of the substrate 1 is doped by an ion implantation method and deposit layer 3 is provided on the surface of the depressions. Thereafter, the mask 2 is removed and heat treatment is performed to diffuse the impurity in the layer 3, forming diffused regions 3' as well as producing an oxide film 4 over the entire surface and at the same time producing the serrated parts 5' of the film 4 which serve as marks in the serrated parts 5. Next, with the serrated parts 5' as marks, a photo resist mask having opening 6 is provided and an impurity of different conductivity type is diffused in the layer 3', forming regions 7
COPYRIGHT: (C)1979,JPO&Japio
JP12036678A 1978-10-02 1978-10-02 Production of semiconductor device Pending JPS5459873A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12036678A JPS5459873A (en) 1978-10-02 1978-10-02 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12036678A JPS5459873A (en) 1978-10-02 1978-10-02 Production of semiconductor device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP50035594A Division JPS51111056A (en) 1975-03-26 1975-03-26 Diffused layer forming method

Publications (1)

Publication Number Publication Date
JPS5459873A true JPS5459873A (en) 1979-05-14

Family

ID=14784409

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12036678A Pending JPS5459873A (en) 1978-10-02 1978-10-02 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5459873A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS574124A (en) * 1980-06-10 1982-01-09 Fujitsu Ltd Manufacture of germanium semiconductor device
JPH04367235A (en) * 1991-06-14 1992-12-18 Sharp Corp Charge transfer device and its manufacture

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4938871A (en) * 1972-08-17 1974-04-11

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4938871A (en) * 1972-08-17 1974-04-11

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS574124A (en) * 1980-06-10 1982-01-09 Fujitsu Ltd Manufacture of germanium semiconductor device
JPH04367235A (en) * 1991-06-14 1992-12-18 Sharp Corp Charge transfer device and its manufacture

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