JPS5583267A - Method of fabricating semiconductor device - Google Patents
Method of fabricating semiconductor deviceInfo
- Publication number
- JPS5583267A JPS5583267A JP15972578A JP15972578A JPS5583267A JP S5583267 A JPS5583267 A JP S5583267A JP 15972578 A JP15972578 A JP 15972578A JP 15972578 A JP15972578 A JP 15972578A JP S5583267 A JPS5583267 A JP S5583267A
- Authority
- JP
- Japan
- Prior art keywords
- film
- pattern
- drain regions
- electrode
- polycrystalline silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/01—Manufacture or treatment
- H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
- H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
- H10D64/01304—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H10D64/01324—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor characterised by the sectional shape, e.g. T or inverted-T
Abstract
PURPOSE: To reduce the capacity between source and drain regions and gate electrode in a silicon gate MOS transistor regardless of the depth of the source and drain regions by forming the gate electrode by two-layer polycrystalline silicon film when forming the transistor.
CONSTITUTION: A thick field SiO2 film 13 and a thin gate SiO2 film 14 surrounded by the film 13 are coated on a p-type silicon substrate 12, and a relatively thin polycrystalline silicon film 15 having n-type imourity and a relatively thick polycrystalline silicon film 16 having no impurity are laminated and grown on the entire surface thereof. Then, a pattern 17 of a resist film is formed on the film 16 at the center of the substrate 12, and with the pattern 17 as a mask the film 16 is etched to thereby retain only the gate electrode 19 made of the film 16. Then, with the electrode 19 as a mask it is etched to thereby form a pattern 18 formed by the film 15 under the electrode 19 and a pattern 20 formed by the film 14. With these patterns 18 and 20 as masks n-type source and drain regions 22 are diffused to be formed in the substrates 12 at both sides thereof.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15972578A JPS5583267A (en) | 1978-12-20 | 1978-12-20 | Method of fabricating semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15972578A JPS5583267A (en) | 1978-12-20 | 1978-12-20 | Method of fabricating semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5583267A true JPS5583267A (en) | 1980-06-23 |
Family
ID=15699905
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15972578A Pending JPS5583267A (en) | 1978-12-20 | 1978-12-20 | Method of fabricating semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5583267A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4978626A (en) * | 1988-09-02 | 1990-12-18 | Motorola, Inc. | LDD transistor process having doping sensitive endpoint etching |
| US5272100A (en) * | 1988-09-08 | 1993-12-21 | Mitsubishi Denki Kabushiki Kaisha | Field effect transistor with T-shaped gate electrode and manufacturing method therefor |
| US5471080A (en) * | 1988-09-08 | 1995-11-28 | Mitsubishi Denki Kabushiki Kaisha | Field effect transistor with a shaped gate electrode |
| US5543646A (en) * | 1988-09-08 | 1996-08-06 | Mitsubishi Denki Kabushiki Kaisha | Field effect transistor with a shaped gate electrode |
| JP2002532870A (en) * | 1998-12-07 | 2002-10-02 | インテル・コーポレーション | Transistor with notched gate |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54108582A (en) * | 1978-02-15 | 1979-08-25 | Toshiba Corp | Manufacture of silicon type field effect transistor |
-
1978
- 1978-12-20 JP JP15972578A patent/JPS5583267A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54108582A (en) * | 1978-02-15 | 1979-08-25 | Toshiba Corp | Manufacture of silicon type field effect transistor |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4978626A (en) * | 1988-09-02 | 1990-12-18 | Motorola, Inc. | LDD transistor process having doping sensitive endpoint etching |
| US5272100A (en) * | 1988-09-08 | 1993-12-21 | Mitsubishi Denki Kabushiki Kaisha | Field effect transistor with T-shaped gate electrode and manufacturing method therefor |
| US5471080A (en) * | 1988-09-08 | 1995-11-28 | Mitsubishi Denki Kabushiki Kaisha | Field effect transistor with a shaped gate electrode |
| US5543646A (en) * | 1988-09-08 | 1996-08-06 | Mitsubishi Denki Kabushiki Kaisha | Field effect transistor with a shaped gate electrode |
| US5834817A (en) * | 1988-09-08 | 1998-11-10 | Mitsubishi Denki Kabushiki Kaisha | Field effect transistor with a shaped gate electrode |
| JP2002532870A (en) * | 1998-12-07 | 2002-10-02 | インテル・コーポレーション | Transistor with notched gate |
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