JPS546471A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS546471A JPS546471A JP7188577A JP7188577A JPS546471A JP S546471 A JPS546471 A JP S546471A JP 7188577 A JP7188577 A JP 7188577A JP 7188577 A JP7188577 A JP 7188577A JP S546471 A JPS546471 A JP S546471A
- Authority
- JP
- Japan
- Prior art keywords
- film
- manufacture
- semiconductor device
- type
- sio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 230000004888 barrier function Effects 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Landscapes
- Bipolar Transistors (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE: To enable a semiconductor to operate at a high speed with a shallow junction obtained by adhering a SiO2 film and Si3N4 film on the semiconductor substrate, by etching the SiO2 film while generating a barrier at the Si3N4 film, and by using these as a mask for forming a P-type and P+-type base regions and N+-type emitter region.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7188577A JPS546471A (en) | 1977-06-16 | 1977-06-16 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7188577A JPS546471A (en) | 1977-06-16 | 1977-06-16 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS546471A true JPS546471A (en) | 1979-01-18 |
Family
ID=13473422
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7188577A Pending JPS546471A (en) | 1977-06-16 | 1977-06-16 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS546471A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60257570A (en) * | 1984-06-04 | 1985-12-19 | Rohm Co Ltd | Manufacturing method of semiconductor device |
| JPS61135160A (en) * | 1984-12-05 | 1986-06-23 | Mitsubishi Electric Corp | Manufacture of transistor |
-
1977
- 1977-06-16 JP JP7188577A patent/JPS546471A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60257570A (en) * | 1984-06-04 | 1985-12-19 | Rohm Co Ltd | Manufacturing method of semiconductor device |
| JPS61135160A (en) * | 1984-12-05 | 1986-06-23 | Mitsubishi Electric Corp | Manufacture of transistor |
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