JPS5466768A - Forming method of electrode window in semiconductor device - Google Patents

Forming method of electrode window in semiconductor device

Info

Publication number
JPS5466768A
JPS5466768A JP13369277A JP13369277A JPS5466768A JP S5466768 A JPS5466768 A JP S5466768A JP 13369277 A JP13369277 A JP 13369277A JP 13369277 A JP13369277 A JP 13369277A JP S5466768 A JPS5466768 A JP S5466768A
Authority
JP
Japan
Prior art keywords
circumference
electrode window
tilt
window
eaves
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13369277A
Other languages
Japanese (ja)
Other versions
JPS6056286B2 (en
Inventor
Minoru Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP13369277A priority Critical patent/JPS6056286B2/en
Publication of JPS5466768A publication Critical patent/JPS5466768A/en
Publication of JPS6056286B2 publication Critical patent/JPS6056286B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: To form the electrode window tilt for the circumference, with dry etching method.
CONSTITUTION: When electron ray photo sensitive resist 8 is coated on the SiO2 film 7 and the amount of exposure 3 to 4 times the required sensitivity is given via the mask, the eaves 91 of anti-taper shape is caused at the circumference of the hole 9 of the film 8 with the scattering of electron beam in the resist in development. Succeedingly, when plasma etching is made with fleon gas, SiO2 under the eaves is shallow etched, causing smooth tilt part 10. When etching is stopped after it reaches the substrate, the bottom of the electrode window 11 is about in agreement with the width d of the upper surface of the hole 9, forming gentle tilt surface 12 at the circumference of window. With this method, the accuracy of dimension is excellent.
COPYRIGHT: (C)1979,JPO&Japio
JP13369277A 1977-11-08 1977-11-08 Method for forming electrode windows in semiconductor devices Expired JPS6056286B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13369277A JPS6056286B2 (en) 1977-11-08 1977-11-08 Method for forming electrode windows in semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13369277A JPS6056286B2 (en) 1977-11-08 1977-11-08 Method for forming electrode windows in semiconductor devices

Publications (2)

Publication Number Publication Date
JPS5466768A true JPS5466768A (en) 1979-05-29
JPS6056286B2 JPS6056286B2 (en) 1985-12-09

Family

ID=15110633

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13369277A Expired JPS6056286B2 (en) 1977-11-08 1977-11-08 Method for forming electrode windows in semiconductor devices

Country Status (1)

Country Link
JP (1) JPS6056286B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56114319A (en) * 1980-02-14 1981-09-08 Fujitsu Ltd Method for forming contact hole
JPS6181628A (en) * 1984-09-28 1986-04-25 Nec Corp Dry etching method
JPS62277746A (en) * 1986-05-27 1987-12-02 Oki Electric Ind Co Ltd Manufacture of semiconductor device
JPS63124418A (en) * 1986-11-13 1988-05-27 Canon Inc Dry etching method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56114319A (en) * 1980-02-14 1981-09-08 Fujitsu Ltd Method for forming contact hole
JPS6181628A (en) * 1984-09-28 1986-04-25 Nec Corp Dry etching method
JPS62277746A (en) * 1986-05-27 1987-12-02 Oki Electric Ind Co Ltd Manufacture of semiconductor device
JPS63124418A (en) * 1986-11-13 1988-05-27 Canon Inc Dry etching method

Also Published As

Publication number Publication date
JPS6056286B2 (en) 1985-12-09

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