JPS5587436A - Method of producing semiconductor device - Google Patents

Method of producing semiconductor device

Info

Publication number
JPS5587436A
JPS5587436A JP16402578A JP16402578A JPS5587436A JP S5587436 A JPS5587436 A JP S5587436A JP 16402578 A JP16402578 A JP 16402578A JP 16402578 A JP16402578 A JP 16402578A JP S5587436 A JPS5587436 A JP S5587436A
Authority
JP
Japan
Prior art keywords
film
high molecular
molecular material
sio
electron beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16402578A
Other languages
Japanese (ja)
Other versions
JPS6327848B2 (en
Inventor
Moritaka Nakamura
Kazuo Toda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16402578A priority Critical patent/JPS5587436A/en
Publication of JPS5587436A publication Critical patent/JPS5587436A/en
Publication of JPS6327848B2 publication Critical patent/JPS6327848B2/ja
Granted legal-status Critical Current

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  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: To etch very simply an SiO2 film on an Si substrate by masking the SiO2 film with a high molecular material containing double bond, applying an electron beam or X-rays to the layer of high molecular material to cleave the bond, and exposing the resulting layer of high molecular material to a hydrogen fluoride-containing gas.
CONSTITUTION: When a bore is made in an SiO2 film 12 formed on an Si substrate 11, the film 12 is masked with a photoresist material consisting of a high molecular material. In other words, a film 13, which consists of cyclized polyisoprene the double bonds in which are cleaved when an electron beam or X-rays are applied thereto, is provided on the surface of the film 2. Then, an electron beam is applied in accordance with a predetermined patten to the surface of the film 13. The resulting product is then exposed to hydrogen fluoride gas to etch that portion of the film 12 which is under an unexposed portion of the film 13, earlier than that portion of the film 12 which is under an exposed portion of the film 13. Then, the film 13 is removed to form a desired opening 14 in the film 12. According to this method, a developing step, rinsing step, drying step and pre-treatment included in a conventional method using a photoresist film can be omitted. Moreover, a method according to this invention permits carrying out an etching step at a high accuracy.
COPYRIGHT: (C)1980,JPO&Japio
JP16402578A 1978-12-25 1978-12-25 Method of producing semiconductor device Granted JPS5587436A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16402578A JPS5587436A (en) 1978-12-25 1978-12-25 Method of producing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16402578A JPS5587436A (en) 1978-12-25 1978-12-25 Method of producing semiconductor device

Publications (2)

Publication Number Publication Date
JPS5587436A true JPS5587436A (en) 1980-07-02
JPS6327848B2 JPS6327848B2 (en) 1988-06-06

Family

ID=15785356

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16402578A Granted JPS5587436A (en) 1978-12-25 1978-12-25 Method of producing semiconductor device

Country Status (1)

Country Link
JP (1) JPS5587436A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024095769A1 (en) * 2022-11-02 2024-05-10 Agc株式会社 Method for manufacturing member having concave structure, and member having concave structure
WO2024247461A1 (en) * 2023-05-31 2024-12-05 Agc株式会社 Method for producing member having recess structure, and member having recess structure

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0236329A (en) * 1988-07-27 1990-02-06 Showa Electric Wire & Cable Co Ltd Waterproof test method for pulling eye of cable
JPH0669796U (en) * 1993-03-10 1994-09-30 東京部品工業株式会社 External observation type leak detector

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024095769A1 (en) * 2022-11-02 2024-05-10 Agc株式会社 Method for manufacturing member having concave structure, and member having concave structure
WO2024247461A1 (en) * 2023-05-31 2024-12-05 Agc株式会社 Method for producing member having recess structure, and member having recess structure

Also Published As

Publication number Publication date
JPS6327848B2 (en) 1988-06-06

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