JPS5468162A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5468162A
JPS5468162A JP13458177A JP13458177A JPS5468162A JP S5468162 A JPS5468162 A JP S5468162A JP 13458177 A JP13458177 A JP 13458177A JP 13458177 A JP13458177 A JP 13458177A JP S5468162 A JPS5468162 A JP S5468162A
Authority
JP
Japan
Prior art keywords
electrode film
regions
film
type region
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13458177A
Other languages
Japanese (ja)
Inventor
Masayoshi Sugiyama
Shuroku Sakurada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP13458177A priority Critical patent/JPS5468162A/en
Publication of JPS5468162A publication Critical patent/JPS5468162A/en
Pending legal-status Critical Current

Links

Landscapes

  • Thyristors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To avoid lowering of the bonding force of the electrode film.
CONSTITUTION: The N+ type region 11 is formed with the N+ type region 3, and the cathode electrode film 12 is placed on the oxide film 4 by bridging the both regions 3 and 11. In this case, even if the composite electrode film 12 on the oxide film 4 causes scaling with various thermal treatments for the layers, since the electrode film 12 in contact with the both regions 3 and 11 in not peeled off from the regions 3 and 11, no electrode 12 is taken off from the semiconductor pellet 20 with the leads attached to the electrode film 12. Further, no electric performance is lowered.
COPYRIGHT: (C)1979,JPO&Japio
JP13458177A 1977-11-11 1977-11-11 Semiconductor device Pending JPS5468162A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13458177A JPS5468162A (en) 1977-11-11 1977-11-11 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13458177A JPS5468162A (en) 1977-11-11 1977-11-11 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5468162A true JPS5468162A (en) 1979-06-01

Family

ID=15131699

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13458177A Pending JPS5468162A (en) 1977-11-11 1977-11-11 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5468162A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57136367A (en) * 1981-02-17 1982-08-23 Meidensha Electric Mfg Co Ltd Rectifier controlled with semiconductor
JPS6327061U (en) * 1986-08-05 1988-02-22

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57136367A (en) * 1981-02-17 1982-08-23 Meidensha Electric Mfg Co Ltd Rectifier controlled with semiconductor
JPS6327061U (en) * 1986-08-05 1988-02-22

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