JPS5477570A - Production of semiconductor element - Google Patents

Production of semiconductor element

Info

Publication number
JPS5477570A
JPS5477570A JP14526377A JP14526377A JPS5477570A JP S5477570 A JPS5477570 A JP S5477570A JP 14526377 A JP14526377 A JP 14526377A JP 14526377 A JP14526377 A JP 14526377A JP S5477570 A JPS5477570 A JP S5477570A
Authority
JP
Japan
Prior art keywords
film
thick
sio
electrodes
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14526377A
Other languages
Japanese (ja)
Inventor
Masamitsu Yamauchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP14526377A priority Critical patent/JPS5477570A/en
Publication of JPS5477570A publication Critical patent/JPS5477570A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads

Landscapes

  • Element Separation (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE: To decrease MOS capacity by burying a SiO2 thick film right under bonding pads.
CONSTITUTION: After the regions intended for bonding pads of a substrate 1 are selectively etched, the surface is covered with a thermal oxidized thin film 2 and a SiO2 thick film 3 is made by a vapor phase growth method. Next, only the film 3 is etched a way and the film 2 is left and at the same time the film 3' is selectively left through a mask by performing etching with a mixed solution of NH4F and HF. Following to this, a base 4 and emitter 5 are provided on the substrate 1 surface and electrodes 6 are led out so that pads 7 are positioned on the buried layers 3'. Hence, the MOS capacity is considerably reduced by the thick buried oxide films 3'. In addition, the surface is flat and therefore the adhesion of the photo mask is good, finer emitter windows may be formed and step cutting of electrodes does not occur.
COPYRIGHT: (C)1979,JPO&Japio
JP14526377A 1977-12-02 1977-12-02 Production of semiconductor element Pending JPS5477570A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14526377A JPS5477570A (en) 1977-12-02 1977-12-02 Production of semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14526377A JPS5477570A (en) 1977-12-02 1977-12-02 Production of semiconductor element

Publications (1)

Publication Number Publication Date
JPS5477570A true JPS5477570A (en) 1979-06-21

Family

ID=15381075

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14526377A Pending JPS5477570A (en) 1977-12-02 1977-12-02 Production of semiconductor element

Country Status (1)

Country Link
JP (1) JPS5477570A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5961946A (en) * 1982-09-30 1984-04-09 Fujitsu Ltd Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5961946A (en) * 1982-09-30 1984-04-09 Fujitsu Ltd Semiconductor device

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