JPS5478094A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5478094A
JPS5478094A JP14688277A JP14688277A JPS5478094A JP S5478094 A JPS5478094 A JP S5478094A JP 14688277 A JP14688277 A JP 14688277A JP 14688277 A JP14688277 A JP 14688277A JP S5478094 A JPS5478094 A JP S5478094A
Authority
JP
Japan
Prior art keywords
layer
metal
element body
photo resist
entire surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14688277A
Other languages
Japanese (ja)
Other versions
JPS6143876B2 (en
Inventor
Masahiko Tsutsumi
Yuzo Abe
Junichi Hatta
Masanobu Yoshisato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP14688277A priority Critical patent/JPS5478094A/en
Publication of JPS5478094A publication Critical patent/JPS5478094A/en
Publication of JPS6143876B2 publication Critical patent/JPS6143876B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Hall/Mr Elements (AREA)

Abstract

PURPOSE: To obtain an element with excellent magnetic effect by covering a surface, flattened by filling an insulating layer among a plural number of semiconductor element bodies formed on an insulating substrate, with a photo resist and providing an opening, by adhering a metal layer to the entire surface and by forming a metal bar touching element bodies through the opening.
CONSTITUTION: Onto insulating substrate 1 of ferrite, ceramic, glass, or the like, a high-mobility semiconductor layer of InSb or the like is adhered and photoetched to form a plural number of semiconductor-element bodies 2 at fixed intervals. Insulating layer 8 of SiO2 or a photo resist is filled among element bodies 2 to flatten its surface, the entire surface is covered with photo resist film 9, and the metal-bar formation part on element body 2 is removed. Then, In or Cu layer 4' is electrodeposited on the entire surface and metal bar 5 touching element body 2 is generated via the film-removement part. As a result, no metal layer is left at the edge of element body 2 and the metal bar becomes independent completely, so that element body 2 will serve sufficient magnetic resistance effect.
COPYRIGHT: (C)1979,JPO&Japio
JP14688277A 1977-12-02 1977-12-02 Manufacture of semiconductor device Granted JPS5478094A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14688277A JPS5478094A (en) 1977-12-02 1977-12-02 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14688277A JPS5478094A (en) 1977-12-02 1977-12-02 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5478094A true JPS5478094A (en) 1979-06-21
JPS6143876B2 JPS6143876B2 (en) 1986-09-30

Family

ID=15417697

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14688277A Granted JPS5478094A (en) 1977-12-02 1977-12-02 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5478094A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4922878A (en) * 1972-06-21 1974-02-28
JPS4934784A (en) * 1972-08-01 1974-03-30
JPS5110778A (en) * 1974-07-17 1976-01-28 Naito Densei Kogyo Co Ltd Jidenhenkansoshi oyobi sonoseizoho

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4922878A (en) * 1972-06-21 1974-02-28
JPS4934784A (en) * 1972-08-01 1974-03-30
JPS5110778A (en) * 1974-07-17 1976-01-28 Naito Densei Kogyo Co Ltd Jidenhenkansoshi oyobi sonoseizoho

Also Published As

Publication number Publication date
JPS6143876B2 (en) 1986-09-30

Similar Documents

Publication Publication Date Title
JPS5331964A (en) Production of semiconductor substrates
JPS52149076A (en) Semiconductor integrated circuit and its preparing method
JPS5317068A (en) Semiconductor device and its production
JPS5272571A (en) Production of semiconductor device
JPS52117063A (en) Preparation of ohmic ontact layer in semiconductor device
JPS5422170A (en) Manufacture of semiconductor device
JPS52130575A (en) Semiconductor device and its preparation
JPS5440084A (en) Semiconductor device and manufacture thereof
JPS548989A (en) Control rectifying device
JPS55110056A (en) Semiconductor device
JPS5317286A (en) Production of semiconductor device
JPS5411687A (en) Manufacture for semiconductor integrated circuit
JPS52113161A (en) Semiconductor device
JPS536579A (en) Semiconductor device
JPS57160156A (en) Semiconductor device
JPS5379473A (en) Manufacture of semiconductor device
JPS5429587A (en) Semiconductor device
JPS5285488A (en) Semiconductor resistance element
JPS53105989A (en) Semiconductor device
JPS5397791A (en) Production of semiconductor integrated circuit device
JPS5353280A (en) Manufacture for semiconductor device
JPS5395580A (en) Semiconductor device
JPS53148987A (en) Semiconductor integrated circuit device and its manufacture
JPS52120781A (en) Semiconductor device
JPS57147253A (en) Manufacture of semiconductor device