JPS5478337A - Production of indium-antimony thin film - Google Patents

Production of indium-antimony thin film

Info

Publication number
JPS5478337A
JPS5478337A JP14674777A JP14674777A JPS5478337A JP S5478337 A JPS5478337 A JP S5478337A JP 14674777 A JP14674777 A JP 14674777A JP 14674777 A JP14674777 A JP 14674777A JP S5478337 A JPS5478337 A JP S5478337A
Authority
JP
Japan
Prior art keywords
film
thin film
insb thin
insb
sio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14674777A
Other languages
Japanese (ja)
Inventor
Kazufumi Yamaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP14674777A priority Critical patent/JPS5478337A/en
Publication of JPS5478337A publication Critical patent/JPS5478337A/en
Pending legal-status Critical Current

Links

Landscapes

  • ing And Chemical Polishing (AREA)
  • Weting (AREA)

Abstract

PURPOSE: To obtain a uniform InSb thin film of high hole coefficient and hole sensitivity for a magneto-electric conversion element by vacuum depositing an InSb thin film on a substrate; heat treating the film; and removing an oxide film formed on the film surface by chemical etching.
CONSTITUTION: InSb is vacuum deposited on substrate 1 such as Si wafer coated with glass or SiO2, or high permeability ferrite wafer coated with insulating film 2 such as SiO2 to form an InSb thin film. The film is then heat treated at about 400W520°C, and a surface oxide film of In2O3 formed by the heat treatment is removed by chemical etching such as hydrochloric acid etching. Thus, the In2O3 can be removed thoroughly, and a high performance InSb thin film with no strain left is obtd. after the heat treatment.
COPYRIGHT: (C)1979,JPO&Japio
JP14674777A 1977-12-06 1977-12-06 Production of indium-antimony thin film Pending JPS5478337A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14674777A JPS5478337A (en) 1977-12-06 1977-12-06 Production of indium-antimony thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14674777A JPS5478337A (en) 1977-12-06 1977-12-06 Production of indium-antimony thin film

Publications (1)

Publication Number Publication Date
JPS5478337A true JPS5478337A (en) 1979-06-22

Family

ID=15414672

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14674777A Pending JPS5478337A (en) 1977-12-06 1977-12-06 Production of indium-antimony thin film

Country Status (1)

Country Link
JP (1) JPS5478337A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013222922A (en) * 2012-04-19 2013-10-28 Fujitsu Ltd Semiconductor device and method for manufacturing the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013222922A (en) * 2012-04-19 2013-10-28 Fujitsu Ltd Semiconductor device and method for manufacturing the same

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