JPS5482973A - Electrode forming method for semiconductor device - Google Patents

Electrode forming method for semiconductor device

Info

Publication number
JPS5482973A
JPS5482973A JP15090977A JP15090977A JPS5482973A JP S5482973 A JPS5482973 A JP S5482973A JP 15090977 A JP15090977 A JP 15090977A JP 15090977 A JP15090977 A JP 15090977A JP S5482973 A JPS5482973 A JP S5482973A
Authority
JP
Japan
Prior art keywords
mask
electrode
opening part
semiconductor device
forming method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15090977A
Other languages
Japanese (ja)
Inventor
Terunobu Miura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15090977A priority Critical patent/JPS5482973A/en
Publication of JPS5482973A publication Critical patent/JPS5482973A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE: To ensure a high-density and minute separation for the electrode by removing selectively the electrode right under the opening part via the anti-corrosion mask containing the opening part which is longer than the electrode width and provided on one of the adjacent electrodes made of the different kinds of the conducting material.
CONSTITUTION: SiO2 22 and Mo23 are laminated on p-type Si substrate 21, and layer 23 is etched away via anti-corrosion mask 24a and 24b and with used of the phosphoric acid group solution. Thus, the eaves part is caused to the mask. Then Al evaporation film 25 is coated on the entire film to lift off mask 24. Thus, Mo23 and Al 25 are arranged alternately with a microspace between. With this method, the gap can be reduced down to 1μ or less with careful control of the etching quantity.
COPYRIGHT: (C)1979,JPO&Japio
JP15090977A 1977-12-14 1977-12-14 Electrode forming method for semiconductor device Pending JPS5482973A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15090977A JPS5482973A (en) 1977-12-14 1977-12-14 Electrode forming method for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15090977A JPS5482973A (en) 1977-12-14 1977-12-14 Electrode forming method for semiconductor device

Publications (1)

Publication Number Publication Date
JPS5482973A true JPS5482973A (en) 1979-07-02

Family

ID=15507028

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15090977A Pending JPS5482973A (en) 1977-12-14 1977-12-14 Electrode forming method for semiconductor device

Country Status (1)

Country Link
JP (1) JPS5482973A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002110961A (en) * 2000-09-26 2002-04-12 New Japan Radio Co Ltd Method of manufacturing charge-coupled element

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002110961A (en) * 2000-09-26 2002-04-12 New Japan Radio Co Ltd Method of manufacturing charge-coupled element

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