JPS5483781A - Semiconductor control element - Google Patents

Semiconductor control element

Info

Publication number
JPS5483781A
JPS5483781A JP15140677A JP15140677A JPS5483781A JP S5483781 A JPS5483781 A JP S5483781A JP 15140677 A JP15140677 A JP 15140677A JP 15140677 A JP15140677 A JP 15140677A JP S5483781 A JPS5483781 A JP S5483781A
Authority
JP
Japan
Prior art keywords
layer
electrode
turn
scr
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15140677A
Other languages
Japanese (ja)
Inventor
Tetsuo Sueoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Meidensha Electric Manufacturing Co Ltd
Original Assignee
Meidensha Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Meidensha Electric Manufacturing Co Ltd filed Critical Meidensha Electric Manufacturing Co Ltd
Priority to JP15140677A priority Critical patent/JPS5483781A/en
Publication of JPS5483781A publication Critical patent/JPS5483781A/en
Pending legal-status Critical Current

Links

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  • Thyristors (AREA)

Abstract

PURPOSE: To make an element turn off at a high speed by separating a N1P2 junction of a GTOSCR with a gate electrode on a P2 layer of p1N1P2N2 by a groove from the P2 layer.
CONSTITUTION: Electrodes 4 and 3 of the P2' layer and N2 separated by groove 2 are connected together to power supply 10, connected to electrode 1 of the P1 layer at its positive terminal, and load 11, and a gate current is applied from power supply 6 in order to turn ON the SCR of P1N1P2N2. Next, when power supply 6 is switched to 8, the voltage is applied between electrode 3 and 5, and 4 and 5, so that junctions P2N2 and P2N1 will be reversely biased. As a result, a current passes partially through the SCR to electrode 5, junction P2N2 recovers through path I from the side closer to electrode 5, and a load current is restricted away from it. At this time, since junction P2N1 is reversely biased through path II, a sweep to the electrode 5 side is made, so that the SCR will turn OFF, At a P2N1 reverse-biasing time, positive holes are injected into separation groove 2 via junctions from P2' and reach the N1 layer right under the N2 layer, thereby obtaining the enough width and resistance not to turn on P1N1P2N2 again.
COPYRIGHT: (C)1979,JPO&Japio
JP15140677A 1977-12-16 1977-12-16 Semiconductor control element Pending JPS5483781A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15140677A JPS5483781A (en) 1977-12-16 1977-12-16 Semiconductor control element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15140677A JPS5483781A (en) 1977-12-16 1977-12-16 Semiconductor control element

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP58251474A Division JPS59130470A (en) 1983-12-26 1983-12-26 semiconductor control element

Publications (1)

Publication Number Publication Date
JPS5483781A true JPS5483781A (en) 1979-07-04

Family

ID=15517886

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15140677A Pending JPS5483781A (en) 1977-12-16 1977-12-16 Semiconductor control element

Country Status (1)

Country Link
JP (1) JPS5483781A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58127377A (en) * 1982-01-25 1983-07-29 Mitsubishi Electric Corp Thyristor
JPS62205661A (en) * 1986-03-05 1987-09-10 Mitsubishi Electric Corp Manufacture of reverse conducting gto
JPH05343663A (en) * 1993-02-12 1993-12-24 Toshiba Corp Gate turn-off thyristor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58127377A (en) * 1982-01-25 1983-07-29 Mitsubishi Electric Corp Thyristor
JPS62205661A (en) * 1986-03-05 1987-09-10 Mitsubishi Electric Corp Manufacture of reverse conducting gto
JPH05343663A (en) * 1993-02-12 1993-12-24 Toshiba Corp Gate turn-off thyristor

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