JPS548457A - Impurity introducing method to poly-crystal silicon - Google Patents

Impurity introducing method to poly-crystal silicon

Info

Publication number
JPS548457A
JPS548457A JP7322477A JP7322477A JPS548457A JP S548457 A JPS548457 A JP S548457A JP 7322477 A JP7322477 A JP 7322477A JP 7322477 A JP7322477 A JP 7322477A JP S548457 A JPS548457 A JP S548457A
Authority
JP
Japan
Prior art keywords
poly
crystal silicon
introducing method
impurity introducing
impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7322477A
Other languages
Japanese (ja)
Inventor
Akihiro Tomosawa
Takeshi Shirato
Shozo Hosoda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP7322477A priority Critical patent/JPS548457A/en
Publication of JPS548457A publication Critical patent/JPS548457A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: To secure a formation of the silicon film as a low resistor by giving a thermal treatment before the impurity is diffused to the poly-crystal silicon film.
COPYRIGHT: (C)1979,JPO&Japio
JP7322477A 1977-06-22 1977-06-22 Impurity introducing method to poly-crystal silicon Pending JPS548457A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7322477A JPS548457A (en) 1977-06-22 1977-06-22 Impurity introducing method to poly-crystal silicon

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7322477A JPS548457A (en) 1977-06-22 1977-06-22 Impurity introducing method to poly-crystal silicon

Publications (1)

Publication Number Publication Date
JPS548457A true JPS548457A (en) 1979-01-22

Family

ID=13511982

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7322477A Pending JPS548457A (en) 1977-06-22 1977-06-22 Impurity introducing method to poly-crystal silicon

Country Status (1)

Country Link
JP (1) JPS548457A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58100445A (en) * 1981-12-10 1983-06-15 Matsushita Electronics Corp Manufacture of semiconductor device
JPH0354834A (en) * 1989-07-21 1991-03-08 Fuji Electric Co Ltd Doping of impurity to polycrystalline silicon film for integrated circuit device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58100445A (en) * 1981-12-10 1983-06-15 Matsushita Electronics Corp Manufacture of semiconductor device
JPH0354834A (en) * 1989-07-21 1991-03-08 Fuji Electric Co Ltd Doping of impurity to polycrystalline silicon film for integrated circuit device

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