JPS5485687A - Hall element of garrium arsenide - Google Patents

Abstract

PURPOSE: To decrease the unbalanced voltage of Hall elements, by matching each terminal electrode of GaAs Hall element to a given crystal axis and by taking the mesea etching shape of the crossing part between GaAs layer and each terminal electrode almost the same.

CONSTITUTION: The n type GaAs 42 is formed on the (100) plane of the semi- insulation substrate 41, and etching is made with mesa etching so that the edge of the layer 42 of cross type is toward (100) axis. The layer 42 is provided with the control current terminal electrode 43 and the Hall output terminal electrode 44, constituting the electrodes so that the ridgeline of the electrode in cotact with the layer 42 is toward (100). With this location, the mesa etching condition between the n type GaAs 42 and each terminal electrode is almost the same shpae for the cross sections a and b, the etching shape of the region 46 is simple, and etching is made to the same shape with good reproducibility, while not giving almost depth of etching. Accordingly, the shift from the design shape is less and the dispersion and the magnitude of the unbalanced voltage of the Hall element can be made less.

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