JPS5486262A - Electron beam device - Google Patents
Electron beam deviceInfo
- Publication number
- JPS5486262A JPS5486262A JP15409077A JP15409077A JPS5486262A JP S5486262 A JPS5486262 A JP S5486262A JP 15409077 A JP15409077 A JP 15409077A JP 15409077 A JP15409077 A JP 15409077A JP S5486262 A JPS5486262 A JP S5486262A
- Authority
- JP
- Japan
- Prior art keywords
- electron beam
- region
- emitter
- mask
- exposed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Electron Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Electron Sources, Ion Sources (AREA)
Abstract
PURPOSE: To form an accurate pattern on a mask by determining a beam diameter or the dozing amount corresponding to an exposed region and by exposing the corresponding region by a desired electron beam.
CONSTITUTION: Electron gun 2 consists of grounded anode 36, Wehnelt cylinder 38 applied with a high negative voltage, and emitter 40 focusing electrons, and emitter 40 uses a prismatic electrode with its tip pointed relatively. Adjusting a current flowing to heater 42 or/and a high voltage between emitter 40 and Wehnelt cylinder 38 varies the diameter of the electron beam at crossover point 24. Then the projective image at point 24 is projected on the photo resist on mask 22 and the region of the photo resist to be exposed changes. In this case, the electron beam diameter at point 24 is set according to the 1st and 2nd operation modes of CPU34 and the fixed region is exposed through the x-directional scanning on mask 22.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP52154090A JPS5914221B2 (en) | 1977-12-21 | 1977-12-21 | electron beam device |
| US05/971,043 US4199689A (en) | 1977-12-21 | 1978-12-19 | Electron beam exposing method and electron beam apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP52154090A JPS5914221B2 (en) | 1977-12-21 | 1977-12-21 | electron beam device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5486262A true JPS5486262A (en) | 1979-07-09 |
| JPS5914221B2 JPS5914221B2 (en) | 1984-04-03 |
Family
ID=15576670
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP52154090A Expired JPS5914221B2 (en) | 1977-12-21 | 1977-12-21 | electron beam device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5914221B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58106748A (en) * | 1981-12-18 | 1983-06-25 | Jeol Ltd | Ion gun |
| JPS58135641A (en) * | 1982-02-06 | 1983-08-12 | Jeol Ltd | Electron beam exposure |
-
1977
- 1977-12-21 JP JP52154090A patent/JPS5914221B2/en not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58106748A (en) * | 1981-12-18 | 1983-06-25 | Jeol Ltd | Ion gun |
| JPS58135641A (en) * | 1982-02-06 | 1983-08-12 | Jeol Ltd | Electron beam exposure |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5914221B2 (en) | 1984-04-03 |
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