JPS5487698A - Single crystal alumina gas phase growing - Google Patents

Single crystal alumina gas phase growing

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Publication number
JPS5487698A
JPS5487698A JP15679177A JP15679177A JPS5487698A JP S5487698 A JPS5487698 A JP S5487698A JP 15679177 A JP15679177 A JP 15679177A JP 15679177 A JP15679177 A JP 15679177A JP S5487698 A JPS5487698 A JP S5487698A
Authority
JP
Japan
Prior art keywords
substrate
gas
single crystal
heated
reaction product
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15679177A
Other languages
Japanese (ja)
Inventor
Masayuki Chifuku
Hideki Yamawaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15679177A priority Critical patent/JPS5487698A/en
Publication of JPS5487698A publication Critical patent/JPS5487698A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: Reaction product gas of liquid or solid Al and HCl is mixed with CO2 and then contacted to heated substrate, whereby the reaction product gas is first supplied to substrate zone and then mixed with CO2 gas, thereby contributing to enhanced crystllinity of Al2O3 single crystal.
CONSTITUTION: Solid or liquid Al 6 and Si substrate 10 on a supporter 9 are heated to a predetermined temperature, HCl gas 4 is first passed through a hollow zone 2 at a specified rate to contact and react with high temperature Al 6 as Al+3HCl→ AlCl3+H2. The formed reaction product gas is carried by H2 and transferred into the zone of Si substrate 10 which has been heated to 950 to 1350°C. After continued gas passage, CO2 gas 14 is introduced to provide reaction as indicated by 4AlCl3+ 3CO2=2Al2O3+3CCl4, whereby formed Al2O3 is epitaxially grown on the substrate.
COPYRIGHT: (C)1979,JPO&Japio
JP15679177A 1977-12-26 1977-12-26 Single crystal alumina gas phase growing Pending JPS5487698A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15679177A JPS5487698A (en) 1977-12-26 1977-12-26 Single crystal alumina gas phase growing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15679177A JPS5487698A (en) 1977-12-26 1977-12-26 Single crystal alumina gas phase growing

Publications (1)

Publication Number Publication Date
JPS5487698A true JPS5487698A (en) 1979-07-12

Family

ID=15635376

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15679177A Pending JPS5487698A (en) 1977-12-26 1977-12-26 Single crystal alumina gas phase growing

Country Status (1)

Country Link
JP (1) JPS5487698A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5864300A (en) * 1981-10-15 1983-04-16 Nec Corp Manufacture of thin film of aluminum oxide by vapor phase method

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5272399A (en) * 1975-12-13 1977-06-16 Fujitsu Ltd Method and apparatus for growth of single crystals of al2o3 from gas p hase

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5272399A (en) * 1975-12-13 1977-06-16 Fujitsu Ltd Method and apparatus for growth of single crystals of al2o3 from gas p hase

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5864300A (en) * 1981-10-15 1983-04-16 Nec Corp Manufacture of thin film of aluminum oxide by vapor phase method

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