JPS5488082A - Manufacture for semiconductor device - Google Patents

Manufacture for semiconductor device

Info

Publication number
JPS5488082A
JPS5488082A JP15681377A JP15681377A JPS5488082A JP S5488082 A JPS5488082 A JP S5488082A JP 15681377 A JP15681377 A JP 15681377A JP 15681377 A JP15681377 A JP 15681377A JP S5488082 A JPS5488082 A JP S5488082A
Authority
JP
Japan
Prior art keywords
film
mask
oxide film
type
opening
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15681377A
Other languages
Japanese (ja)
Other versions
JPS5620709B2 (en
Inventor
Shigeru Komatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP15681377A priority Critical patent/JPS5488082A/en
Priority to US05/969,007 priority patent/US4210689A/en
Priority to GB7848841A priority patent/GB2014361B/en
Priority to DE2855823A priority patent/DE2855823C2/en
Publication of JPS5488082A publication Critical patent/JPS5488082A/en
Publication of JPS5620709B2 publication Critical patent/JPS5620709B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To enable highly accurate opening and to prevent open electrode stage, while keeping the self alignment, even with the nitride film eliminated, by inserting thick CVD oxide film of the surface oxide film.
CONSTITUTION: The CVD oxide film 35 is laminated and roughly opened on the thermal oxide film 34 of the N type Si substrate 31 having the base layer 32 of the P type protection ring type, by means of etching speed difference, and the films 34 and 35 are unified with high temperature treatment. Next, the Si3N4 mask 37 is formed accurately and the layer 32 is exposed 42 with the film 37 by using the resist mask 40. The mask 40 is changed to 43, and the film 35 is opened 44 with the film 37. Next, since the opening 42 is already formed on the film 34 even by removing the mask 43 and the nitride film 37, self-alignment is kept, and since the nitride film is removed, no stage opening is caused in forming the electrodes 49 and 50 and ocating the N type doped polycrystal Si 45.
COPYRIGHT: (C)1979,JPO&Japio
JP15681377A 1977-12-26 1977-12-26 Manufacture for semiconductor device Granted JPS5488082A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP15681377A JPS5488082A (en) 1977-12-26 1977-12-26 Manufacture for semiconductor device
US05/969,007 US4210689A (en) 1977-12-26 1978-12-13 Method of producing semiconductor devices
GB7848841A GB2014361B (en) 1977-12-26 1978-12-18 Method of producing semiconductor devices
DE2855823A DE2855823C2 (en) 1977-12-26 1978-12-22 Process for manufacturing semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15681377A JPS5488082A (en) 1977-12-26 1977-12-26 Manufacture for semiconductor device

Publications (2)

Publication Number Publication Date
JPS5488082A true JPS5488082A (en) 1979-07-12
JPS5620709B2 JPS5620709B2 (en) 1981-05-15

Family

ID=15635880

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15681377A Granted JPS5488082A (en) 1977-12-26 1977-12-26 Manufacture for semiconductor device

Country Status (1)

Country Link
JP (1) JPS5488082A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60219770A (en) * 1984-04-16 1985-11-02 Rohm Co Ltd Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60219770A (en) * 1984-04-16 1985-11-02 Rohm Co Ltd Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS5620709B2 (en) 1981-05-15

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