JPS54880A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS54880A
JPS54880A JP6545477A JP6545477A JPS54880A JP S54880 A JPS54880 A JP S54880A JP 6545477 A JP6545477 A JP 6545477A JP 6545477 A JP6545477 A JP 6545477A JP S54880 A JPS54880 A JP S54880A
Authority
JP
Japan
Prior art keywords
semiconductor device
manufacture
easy
facilitate
avoid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6545477A
Other languages
Japanese (ja)
Inventor
Junji Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP6545477A priority Critical patent/JPS54880A/en
Publication of JPS54880A publication Critical patent/JPS54880A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/027—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs
    • H10D30/0278—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs forming single crystalline channels on wafers after forming insulating device isolations

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: To avoid a short circuit between elements as well as to facilitate an easy control of the threshold voltage and an easy setting of the channel conduction type, by forming previously a desired conduction-type region on the surface of the semiconductor substrate on which a semiconductor device is to be formed.
COPYRIGHT: (C)1979,JPO&Japio
JP6545477A 1977-06-03 1977-06-03 Manufacture of semiconductor device Pending JPS54880A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6545477A JPS54880A (en) 1977-06-03 1977-06-03 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6545477A JPS54880A (en) 1977-06-03 1977-06-03 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS54880A true JPS54880A (en) 1979-01-06

Family

ID=13287595

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6545477A Pending JPS54880A (en) 1977-06-03 1977-06-03 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS54880A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57114271A (en) * 1981-01-06 1982-07-16 Nec Corp Complementary mis integrated circuit
JPS6051619A (en) * 1983-08-29 1985-03-23 Kemiraito Kogyo Kk Process for removing chloride ion in iron oxide powder
JPS61146719A (en) * 1984-12-17 1986-07-04 Nisshin Steel Co Ltd Method for removing chlorine ion from iron oxide
JPS61219128A (en) * 1985-03-25 1986-09-29 Fujitsu Ltd Manufacture of semiconductor device
US4966866A (en) * 1988-11-22 1990-10-30 Kabushiki Kaisha Toshiba Method for manufacturing semiconductor device having gate electrodes of different conductivity types

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57114271A (en) * 1981-01-06 1982-07-16 Nec Corp Complementary mis integrated circuit
JPS6051619A (en) * 1983-08-29 1985-03-23 Kemiraito Kogyo Kk Process for removing chloride ion in iron oxide powder
JPS61146719A (en) * 1984-12-17 1986-07-04 Nisshin Steel Co Ltd Method for removing chlorine ion from iron oxide
JPS61219128A (en) * 1985-03-25 1986-09-29 Fujitsu Ltd Manufacture of semiconductor device
US4966866A (en) * 1988-11-22 1990-10-30 Kabushiki Kaisha Toshiba Method for manufacturing semiconductor device having gate electrodes of different conductivity types

Similar Documents

Publication Publication Date Title
JPS5435689A (en) Semiconductor integrated circuit device
JPS5432982A (en) Manufacture of gate turn off thyristor
JPS5395571A (en) Semiconductor device
JPS5391586A (en) High-dielectric-strength semiconductor element and its manufacture
JPS54880A (en) Manufacture of semiconductor device
JPS5316584A (en) Semiconductor control device
JPS5412573A (en) Junction type field effect transistor and production of the same
JPS53118375A (en) Manufacture of semiconductor device
JPS53141585A (en) Manufacture of insulating gate field effect type semiconductor device
JPS5269284A (en) Semiconductor device
JPS52117554A (en) Manufacturing method of semiconductor device
JPS5220769A (en) Longitudinal semi-conductor unit
JPS538072A (en) Semiconductor device
JPS5228868A (en) Semiconductor device
JPS53102682A (en) Control method of self substrate bias voltage
JPS53142877A (en) Manufacture for compound semiconductor device
JPS5418223A (en) Agc circuit formed into integrated circuit
JPS52127157A (en) Manufacture of semiconductor
JPS53135582A (en) Semiconductor device and its manufacture
JPS5323579A (en) Production of semiconductor device
JPS52153383A (en) Preparation of semiconductor device
JPS5440575A (en) Semiconductor device
JPS5435683A (en) Manufacture of semiconductor device
JPS5439562A (en) Semiconductor switch
JPS533071A (en) Semiconductor device