JPS548982A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS548982A
JPS548982A JP7518977A JP7518977A JPS548982A JP S548982 A JPS548982 A JP S548982A JP 7518977 A JP7518977 A JP 7518977A JP 7518977 A JP7518977 A JP 7518977A JP S548982 A JPS548982 A JP S548982A
Authority
JP
Japan
Prior art keywords
semiconductor device
substrate
reversely
junction
improve
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7518977A
Other languages
Japanese (ja)
Inventor
Katsuhiro Oda
Takeshi Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP7518977A priority Critical patent/JPS548982A/en
Publication of JPS548982A publication Critical patent/JPS548982A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 

Landscapes

  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To improve the reverse dielectric-strength characteristics of a PN junction, by providing a concave part without any corner onto the surface of a unidirectional semiconductor substrate and by forming a reversely-conductive region against the substrate into the internal surface.
JP7518977A 1977-06-23 1977-06-23 Semiconductor device Pending JPS548982A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7518977A JPS548982A (en) 1977-06-23 1977-06-23 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7518977A JPS548982A (en) 1977-06-23 1977-06-23 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS548982A true JPS548982A (en) 1979-01-23

Family

ID=13568994

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7518977A Pending JPS548982A (en) 1977-06-23 1977-06-23 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS548982A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02111079A (en) * 1988-06-16 1990-04-24 Hyundai Electron Ind Co Ltd High voltage semiconductor device and its manufacturing method
US4977107A (en) * 1989-08-23 1990-12-11 Motorola Inc. Method for manufacturing semiconductor rectifier
WO2003081681A1 (en) * 2002-03-26 2003-10-02 Sanken Electric Co., Ltd. Semiconductor element and method for fabricating the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02111079A (en) * 1988-06-16 1990-04-24 Hyundai Electron Ind Co Ltd High voltage semiconductor device and its manufacturing method
US4977107A (en) * 1989-08-23 1990-12-11 Motorola Inc. Method for manufacturing semiconductor rectifier
WO2003081681A1 (en) * 2002-03-26 2003-10-02 Sanken Electric Co., Ltd. Semiconductor element and method for fabricating the same

Similar Documents

Publication Publication Date Title
JPS52101990A (en) Semiconductor device for photoelectric transducer and its manufacture
JPS53108382A (en) Semiconductor device
JPS5417682A (en) Semiconductor and its manufacture
JPS547883A (en) Semiconductor device and its manufacture
JPS52109369A (en) Manufacture of semiconductor device
JPS52128063A (en) Manufacture of semiconductor device
JPS5379378A (en) Semoconductor davice and its production
JPS5346288A (en) Mis type semiconductor device
JPS5396666A (en) Manufacture of semiconductor device with pn junction
JPS52129380A (en) Semiconductor device
JPS53118374A (en) Integrated diode device
JPS5214382A (en) Semiconductor device
JPS5391684A (en) Semiconductor laser
JPS5338981A (en) Semiconductor device
JPS53139476A (en) Manufacture of semiconductor device
JPS5387183A (en) Planar type semiconductor device
JPS5334466A (en) Electrode construction of semiconductor device
JPS52120773A (en) Semiconductor element
JPS5373979A (en) Transistor device
JPS5378794A (en) Photo semiconductor element
JPS53126870A (en) Semiconductor device
JPS5314585A (en) Semiconductor device
JPS5439585A (en) Semiconductor memory device
JPS5311574A (en) Production of semiconductor device
JPS5380184A (en) Manufacture of semiconductor device