JPS5492076A - Mos-type semiconductor device - Google Patents
Mos-type semiconductor deviceInfo
- Publication number
- JPS5492076A JPS5492076A JP7478A JP7478A JPS5492076A JP S5492076 A JPS5492076 A JP S5492076A JP 7478 A JP7478 A JP 7478A JP 7478 A JP7478 A JP 7478A JP S5492076 A JPS5492076 A JP S5492076A
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- oxide film
- mos
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 3
- 238000009792 diffusion process Methods 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 abstract 1
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To secure a high density for the device by forming the poly Si film on the Si substrate and then forming the diffusion layer and the gate oxide film through the self-matching after the selective opening given.
CONSTITUTION: Oxide film 9 is formed by oxidizing the Si substrate selectively, and then coating poly Si10 containing the impurity with an opening provided. Then gate oxide film 11 and protective film 12 are formed simultaneously on substrate 8 and film 10 through the heat treatment. In this constitution, diffusion layer 14 and gate film 11 are formed through the self-matching. Thus, the formation of the short channel is facilitated with a high density.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7478A JPS5492076A (en) | 1977-12-28 | 1977-12-28 | Mos-type semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7478A JPS5492076A (en) | 1977-12-28 | 1977-12-28 | Mos-type semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5492076A true JPS5492076A (en) | 1979-07-20 |
Family
ID=11464016
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7478A Pending JPS5492076A (en) | 1977-12-28 | 1977-12-28 | Mos-type semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5492076A (en) |
-
1977
- 1977-12-28 JP JP7478A patent/JPS5492076A/en active Pending
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