JPS5472668A - Manufacture for semiconductor device - Google Patents

Manufacture for semiconductor device

Info

Publication number
JPS5472668A
JPS5472668A JP13966177A JP13966177A JPS5472668A JP S5472668 A JPS5472668 A JP S5472668A JP 13966177 A JP13966177 A JP 13966177A JP 13966177 A JP13966177 A JP 13966177A JP S5472668 A JPS5472668 A JP S5472668A
Authority
JP
Japan
Prior art keywords
film
ion injection
mask
nitride film
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13966177A
Other languages
Japanese (ja)
Other versions
JPS6139751B2 (en
Inventor
Takashi Ito
Shinpei Tsuchiya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP13966177A priority Critical patent/JPS5472668A/en
Publication of JPS5472668A publication Critical patent/JPS5472668A/en
Publication of JPS6139751B2 publication Critical patent/JPS6139751B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To avoid the relocation of impurity into the surface insulation film, by performing ion injection annealing via the direct thermal nitride film formed on the Si surface.
CONSTITUTION: The insulation film 2 of the P type Si substrate 1 is opened, it is processed at 900 to 1300°C under NH3 atomosphere and Si3N4 3 is selectively coated. The B ion injection layer 5 is made on the thin film 3 by taking the film 2 as a mask. Next, processing is made at about 1000°C for about 30 minutes. In this case, the Si3N4 film 3 forms a strong mask against the diffusion of B and performs no absorbing out as SiO2, then the surface concentration of the layer 5 is not lowered. Further, the invasion of alkali ions can completely be blocked with the finness of the nitride film itself and good masking nature. Next, rquired gate film is formed by overlaying CVDSiO2 and the gate electrode material of polycrystal Si7 is laminated. After that, FET is formed with conventional methods. With this, correct threshold value can be assured with channel doping.
COPYRIGHT: (C)1979,JPO&Japio
JP13966177A 1977-11-21 1977-11-21 Manufacture for semiconductor device Granted JPS5472668A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13966177A JPS5472668A (en) 1977-11-21 1977-11-21 Manufacture for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13966177A JPS5472668A (en) 1977-11-21 1977-11-21 Manufacture for semiconductor device

Publications (2)

Publication Number Publication Date
JPS5472668A true JPS5472668A (en) 1979-06-11
JPS6139751B2 JPS6139751B2 (en) 1986-09-05

Family

ID=15250459

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13966177A Granted JPS5472668A (en) 1977-11-21 1977-11-21 Manufacture for semiconductor device

Country Status (1)

Country Link
JP (1) JPS5472668A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02246325A (en) * 1989-02-13 1990-10-02 Internatl Business Mach Corp <Ibm> Manufacture of transistor
KR100314715B1 (en) * 1997-01-16 2002-02-19 가네꼬 히사시 Semiconductor element with thermally nitrided film on high resistance film and method of manufacturing the same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50148070A (en) * 1974-05-20 1975-11-27
JPS51148377A (en) * 1975-06-14 1976-12-20 Fujitsu Ltd Manufacturing method of mis type semiconductor device
JPS5255375A (en) * 1975-10-28 1977-05-06 Ibm Method of making semiconductor devices

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50148070A (en) * 1974-05-20 1975-11-27
JPS51148377A (en) * 1975-06-14 1976-12-20 Fujitsu Ltd Manufacturing method of mis type semiconductor device
JPS5255375A (en) * 1975-10-28 1977-05-06 Ibm Method of making semiconductor devices

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02246325A (en) * 1989-02-13 1990-10-02 Internatl Business Mach Corp <Ibm> Manufacture of transistor
KR100314715B1 (en) * 1997-01-16 2002-02-19 가네꼬 히사시 Semiconductor element with thermally nitrided film on high resistance film and method of manufacturing the same
US6358808B1 (en) 1997-01-16 2002-03-19 Nec Corporation Semiconductor element with thermally nitrided film on high resistance film and method of manufacturing the same

Also Published As

Publication number Publication date
JPS6139751B2 (en) 1986-09-05

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