JPS5496363A - Electrode forming method for semiconductor device - Google Patents

Electrode forming method for semiconductor device

Info

Publication number
JPS5496363A
JPS5496363A JP312678A JP312678A JPS5496363A JP S5496363 A JPS5496363 A JP S5496363A JP 312678 A JP312678 A JP 312678A JP 312678 A JP312678 A JP 312678A JP S5496363 A JPS5496363 A JP S5496363A
Authority
JP
Japan
Prior art keywords
pattern
film
mask
metal layer
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP312678A
Other languages
Japanese (ja)
Inventor
Yasunari Kajiwara
Yukio Higaki
Mari Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP312678A priority Critical patent/JPS5496363A/en
Publication of JPS5496363A publication Critical patent/JPS5496363A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: To correct the defects caused in case the photo resist is used as the mask and thus to form a high-accuracy electrode/wiring pattern, by forming the insulating film selectively on the metal layer surface on the surface of the semiconductor substrate to use it as the mask.
CONSTITUTION: In the case of the negative pattern, insulating film 4 of the thin silicon oxide film or the like is formed including negative pattern 3 formed directly on metal layer 2 of Al and the like via the photo resist. Then pattern 3 and the area of film 4 on pattern 3 are removed via the resist removing solution or the like, and thus pattern formed by film 4 is obtained as desired with sufficiently high accuracy. Using film 4 as the mask, the etching is given through the plasma sputtering of chlorine ion. As a result, film 4 receives no etching substantially, and furthermore the electrode pattern formed with the minute metal layer can be obtained with no biting to the lower part of the mask.
COPYRIGHT: (C)1979,JPO&Japio
JP312678A 1978-01-13 1978-01-13 Electrode forming method for semiconductor device Pending JPS5496363A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP312678A JPS5496363A (en) 1978-01-13 1978-01-13 Electrode forming method for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP312678A JPS5496363A (en) 1978-01-13 1978-01-13 Electrode forming method for semiconductor device

Publications (1)

Publication Number Publication Date
JPS5496363A true JPS5496363A (en) 1979-07-30

Family

ID=11548662

Family Applications (1)

Application Number Title Priority Date Filing Date
JP312678A Pending JPS5496363A (en) 1978-01-13 1978-01-13 Electrode forming method for semiconductor device

Country Status (1)

Country Link
JP (1) JPS5496363A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56128780U (en) * 1980-02-29 1981-09-30
JPS5871643A (en) * 1981-10-23 1983-04-28 Nec Kyushu Ltd Manufacture of semiconductor device
JPH0294439A (en) * 1988-09-29 1990-04-05 Nec Corp Manufacture of semiconductor device
JPH06302561A (en) * 1992-06-26 1994-10-28 Nec Corp Dry-etching method

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52120782A (en) * 1976-04-05 1977-10-11 Nec Corp Manufacture of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52120782A (en) * 1976-04-05 1977-10-11 Nec Corp Manufacture of semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56128780U (en) * 1980-02-29 1981-09-30
JPS5871643A (en) * 1981-10-23 1983-04-28 Nec Kyushu Ltd Manufacture of semiconductor device
JPH0294439A (en) * 1988-09-29 1990-04-05 Nec Corp Manufacture of semiconductor device
JPH06302561A (en) * 1992-06-26 1994-10-28 Nec Corp Dry-etching method

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