JPS6420624A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6420624A JPS6420624A JP17631887A JP17631887A JPS6420624A JP S6420624 A JPS6420624 A JP S6420624A JP 17631887 A JP17631887 A JP 17631887A JP 17631887 A JP17631887 A JP 17631887A JP S6420624 A JPS6420624 A JP S6420624A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- state
- film
- manufacture
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 238000005530 etching Methods 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 2
- 229910052760 oxygen Inorganic materials 0.000 abstract 2
- 239000001301 oxygen Substances 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To accurately form a pattern and to improve the state of the pattern by removing an unnecessary resist residue by oxygen plasma, and then vapor etching to form the pattern. CONSTITUTION:When it is exposed with an oxygen plasma 3, a resist residue 2b on an SiN film 1c laminated together with an SiO2 film 1b on a wafer 1b formed by etching is removed, but since a resist pattern 2a is thick, it is not completely removed but remains. When it is treated by vapor etching 3 in this state, a pattern is formed accurately on the film 1c in good state.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17631887A JPS6420624A (en) | 1987-07-15 | 1987-07-15 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17631887A JPS6420624A (en) | 1987-07-15 | 1987-07-15 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6420624A true JPS6420624A (en) | 1989-01-24 |
Family
ID=16011488
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17631887A Pending JPS6420624A (en) | 1987-07-15 | 1987-07-15 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6420624A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS576684A (en) * | 1980-06-13 | 1982-01-13 | Toyo Boseki | Polyester fiber for wadding |
| WO2002025728A3 (en) * | 2000-09-21 | 2002-06-06 | Infineon Technologies Corp | Dual thickness gate oxide fabrication method using plasma surface treatment |
-
1987
- 1987-07-15 JP JP17631887A patent/JPS6420624A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS576684A (en) * | 1980-06-13 | 1982-01-13 | Toyo Boseki | Polyester fiber for wadding |
| WO2002025728A3 (en) * | 2000-09-21 | 2002-06-06 | Infineon Technologies Corp | Dual thickness gate oxide fabrication method using plasma surface treatment |
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