JPS5497380A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5497380A JPS5497380A JP462578A JP462578A JPS5497380A JP S5497380 A JPS5497380 A JP S5497380A JP 462578 A JP462578 A JP 462578A JP 462578 A JP462578 A JP 462578A JP S5497380 A JPS5497380 A JP S5497380A
- Authority
- JP
- Japan
- Prior art keywords
- film
- oxidized
- mask
- substrate
- redistributed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
Abstract
PURPOSE: To reduce the substrate bias effect of a MOS device and to improve shielding characteristics by a specific thermal processing method utilizing that B on the substrate surface lessens by being redistributed through thermal oxidation.
CONSTITUTION: On P-type Si 1 with B doped, oxidized film 3 is formed, one part 2 of film 3 is removed by nitriding-film mask 4, and the oxidized film is oxidized and removed by mask 4. At this time, 2(Dt)1/2 is made nearly equal to 1μm denoting diffusion coefficient of B and thermal oxidation time by D and (t) respectively. Lastly, the mask is removed. After this provess, the desired value to the B density can be obtained at surface la of the substrate and the density does not change under film 3 by nitriding-film 4. Next, B ions are injected via gate oxidized film 5 to control the threshold level, thereby forming n--type doped Si gate electrode 7. A window is made in film 5 and n+-type ion injected layer 8 is provided, so that even if annealing is done , B will not be redistributed. The surface is covered with SiO29 and electrode 10 is fitted. In this constitution, the need for a channel stopper is eliminated. Further, the punch-through dielectric strength becomes high and shielding characteristics improve.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP462578A JPS5497380A (en) | 1978-01-18 | 1978-01-18 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP462578A JPS5497380A (en) | 1978-01-18 | 1978-01-18 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5497380A true JPS5497380A (en) | 1979-08-01 |
Family
ID=11589215
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP462578A Pending JPS5497380A (en) | 1978-01-18 | 1978-01-18 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5497380A (en) |
-
1978
- 1978-01-18 JP JP462578A patent/JPS5497380A/en active Pending
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