JPS55105331A - Method for forming electronic-beam resist pattern on electrical insulating material - Google Patents
Method for forming electronic-beam resist pattern on electrical insulating materialInfo
- Publication number
- JPS55105331A JPS55105331A JP1356379A JP1356379A JPS55105331A JP S55105331 A JPS55105331 A JP S55105331A JP 1356379 A JP1356379 A JP 1356379A JP 1356379 A JP1356379 A JP 1356379A JP S55105331 A JPS55105331 A JP S55105331A
- Authority
- JP
- Japan
- Prior art keywords
- thickness
- film
- layer
- electron
- resist pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Electron Beam Exposure (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
PURPOSE: To eliminate the deposition of electrons by forming a layer comprising aqueous soluble hihg-molecular materials on an electron-beam resist pattern provided on an insulating material; by further providing a conductive layer whose thichness is such that the electron beam can sufficiently pass through it; and by making the layer responsive.
CONSTITUTION: On a substrate 101 comprising glass, quartz, and the like with the thickness of about 0.2W5mm, are deposited and laminated a light-screening layer 102 of polycrystal Si, a cromium oxide film, and the like which pass the ultraviolet light to the depth of 1/5 or less of the thickness of the substrate, and an electron-beam resist film 103 with the thickness of about 0.1W 2μm, Then, after they have been dried, is applied a film 104 of polyvinyl alcohol whose thickness is about 500W2,000Å and the average polymerization degree is about 500. Then, Ag paste which is dilluted by ethyl acetate is applied thereon to the thickness of about 250W750Å, thereby a conductive layer 105 is obtained. Thereafter, electron-beam exposure is made from the surface of said layer 105. The device is immersed into the water of about 15W40°C, the film 104 is resolved and removed, and the film 105 thereon is also removed. In this way, a resist pattern 106 having an accurate configuration can be obtained.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1356379A JPS55105331A (en) | 1979-02-08 | 1979-02-08 | Method for forming electronic-beam resist pattern on electrical insulating material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1356379A JPS55105331A (en) | 1979-02-08 | 1979-02-08 | Method for forming electronic-beam resist pattern on electrical insulating material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55105331A true JPS55105331A (en) | 1980-08-12 |
| JPS6151414B2 JPS6151414B2 (en) | 1986-11-08 |
Family
ID=11836632
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1356379A Granted JPS55105331A (en) | 1979-02-08 | 1979-02-08 | Method for forming electronic-beam resist pattern on electrical insulating material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55105331A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6074521A (en) * | 1983-09-30 | 1985-04-26 | Toshiba Corp | Pattern forming process |
| CN111320164A (en) * | 2020-02-28 | 2020-06-23 | 南方科技大学 | A kind of preparation method of dangling graphene structure and dangling graphene structure obtained by it and application |
-
1979
- 1979-02-08 JP JP1356379A patent/JPS55105331A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6074521A (en) * | 1983-09-30 | 1985-04-26 | Toshiba Corp | Pattern forming process |
| CN111320164A (en) * | 2020-02-28 | 2020-06-23 | 南方科技大学 | A kind of preparation method of dangling graphene structure and dangling graphene structure obtained by it and application |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6151414B2 (en) | 1986-11-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS561533A (en) | Method of photoetching | |
| JPS57130430A (en) | Pattern formation | |
| JPS5669835A (en) | Method for forming thin film pattern | |
| JPS6052579B2 (en) | Contact exposure method for positive photoresist | |
| JPS52119172A (en) | Forming method of fine pattern | |
| JPS5461478A (en) | Chromium plate | |
| JPS57198632A (en) | Fine pattern formation | |
| JPS54107277A (en) | Production of semiconductor device | |
| JPS559887A (en) | Transfer paper with gold or sliver pictures to be put on ceramics | |
| JPS5443681A (en) | Electron beam light-exposing method | |
| JPS5258473A (en) | Production of semiconductor device | |
| JPS54132178A (en) | Semiconductor device | |
| JPS5478668A (en) | Manufacture of semiconductor device | |
| JPS5741644A (en) | Preparation of recording material | |
| JPS57152582A (en) | Magnetic bubble memory element | |
| JPS55108988A (en) | Production of magnetic detector | |
| JPS5636120A (en) | Manufacture of magnetic bubble device | |
| JPS5799371A (en) | Formation of resin film | |
| JPS5293273A (en) | Fine pattern forming method | |
| JPS5513995A (en) | Method of producing a semiconductor device | |
| JPS5210070A (en) | Method for manufacturing silicon semiconductor device | |
| JPS55107781A (en) | Etching method for metal film | |
| JPS55108989A (en) | Production of magnetic detector | |
| JPS5586118A (en) | Alignment mark formation | |
| JPS52120770A (en) | Thin film formation method |