JPS55105381A - Manufacture of schottky barrier field-effect transistor - Google Patents
Manufacture of schottky barrier field-effect transistorInfo
- Publication number
- JPS55105381A JPS55105381A JP16369879A JP16369879A JPS55105381A JP S55105381 A JPS55105381 A JP S55105381A JP 16369879 A JP16369879 A JP 16369879A JP 16369879 A JP16369879 A JP 16369879A JP S55105381 A JPS55105381 A JP S55105381A
- Authority
- JP
- Japan
- Prior art keywords
- schottky barrier
- layer
- gate electrode
- source
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000004888 barrier function Effects 0.000 title abstract 3
- 230000005669 field effect Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 150000002500 ions Chemical class 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Landscapes
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE: To improve the yield of a high-frequency Schottky barrier FET by making the distance between the source and the drain in the channel part shorter than the length of the gate electrode.
CONSTITUTION: The p-type Si layer 10 is formed on the n- Si substrate 9 so that the depletion layer reaches the substrate, and the p+-layers 11, 12 are made in the layer 10. The metal masks 13, 14 are provided, B ions are implanted into the layer 10 at the angle of ±α with the vertical line on the surface in turn to form the ion implanted layers 11'∼12" with high concentration. The mask 13 is removed, the surface is covered with the CVD-SiO2 film 15, and is selectively opened to make the source and drain electrodes 16, 17, the gate electrode 14 is opened, and the process is completed. In this way, the distance between the source and the drain in the channel part can be made shorter than the length of the gate electrode, the dimension precision is excellent by ion implantation. Accordingly a high-frequency Schottky barrier FET can be obtained with a higher yield.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16369879A JPS55105381A (en) | 1979-12-17 | 1979-12-17 | Manufacture of schottky barrier field-effect transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16369879A JPS55105381A (en) | 1979-12-17 | 1979-12-17 | Manufacture of schottky barrier field-effect transistor |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12050872A Division JPS5521465B2 (en) | 1972-12-01 | 1972-12-01 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55105381A true JPS55105381A (en) | 1980-08-12 |
| JPS566152B2 JPS566152B2 (en) | 1981-02-09 |
Family
ID=15778906
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16369879A Granted JPS55105381A (en) | 1979-12-17 | 1979-12-17 | Manufacture of schottky barrier field-effect transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55105381A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3545239A1 (en) * | 1985-12-20 | 1987-06-25 | Licentia Gmbh | Patterned semiconductor body |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58189632U (en) * | 1982-06-11 | 1983-12-16 | アイコム株式会社 | frequency synthesizer |
| JPS61186024A (en) * | 1985-02-13 | 1986-08-19 | Nec Corp | Timing signal generating circuit |
| KR102227830B1 (en) | 2019-09-06 | 2021-03-15 | 주식회사 포스코 | Transporting apparatus and method |
-
1979
- 1979-12-17 JP JP16369879A patent/JPS55105381A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3545239A1 (en) * | 1985-12-20 | 1987-06-25 | Licentia Gmbh | Patterned semiconductor body |
| DE3545239C2 (en) * | 1985-12-20 | 1998-04-09 | Kasper Erich Prof Dr Rer Nat | Method for producing a contacting area on a structured semiconductor body |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS566152B2 (en) | 1981-02-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0085916A3 (en) | Method of fabricating field effect transistors | |
| JPS5710266A (en) | Mis field effect semiconductor device | |
| JPS55105381A (en) | Manufacture of schottky barrier field-effect transistor | |
| JPS57192063A (en) | Manufacture of semiconductor device | |
| JPS57155777A (en) | Mos transistor | |
| JPS6433970A (en) | Field effect semiconductor device | |
| JPS5619671A (en) | Manufacture of insulated gate type field effect transistor | |
| JPS56126973A (en) | Mos field effect transistor | |
| JPS5585073A (en) | Manufacture of insulation gate type electric field effect transistor | |
| JPS5556663A (en) | Insulating-gate type field-effect transistor | |
| JPS57143854A (en) | Complementary type metal oxide semiconductor device and its manufacture | |
| JPS5499578A (en) | Field effect transistor | |
| JPS54161889A (en) | Insulated gate type field effect transistor | |
| JPS56104470A (en) | Semiconductor device and manufacture thereof | |
| JPS6457673A (en) | Manufacture of thin film transistor | |
| JPS57153474A (en) | Manufacture of insulation gate field effect transistor | |
| JPS645068A (en) | Manufacture of semiconductor device | |
| JPS572579A (en) | Manufacture of junction type field effect transistor | |
| JPS5563876A (en) | Field-effect semiconductor device | |
| JPS5752167A (en) | Insulated gate type field effect transistor and manufacture thereof | |
| JPS56115570A (en) | Manufacture of semiconductor device | |
| JPS57153462A (en) | Manufacture of semiconductor integrated circuit device | |
| JPS5670669A (en) | Longitudinal semiconductor device | |
| JPS57201080A (en) | Semiconductor device | |
| JPS5737882A (en) | Compound semiconductor device and production thereof |