JPS5563876A - Field-effect semiconductor device - Google Patents

Field-effect semiconductor device

Info

Publication number
JPS5563876A
JPS5563876A JP13771878A JP13771878A JPS5563876A JP S5563876 A JPS5563876 A JP S5563876A JP 13771878 A JP13771878 A JP 13771878A JP 13771878 A JP13771878 A JP 13771878A JP S5563876 A JPS5563876 A JP S5563876A
Authority
JP
Japan
Prior art keywords
region
oxide film
type
gate
insulating layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13771878A
Other languages
Japanese (ja)
Inventor
Hidemi Takakuwa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP13771878A priority Critical patent/JPS5563876A/en
Publication of JPS5563876A publication Critical patent/JPS5563876A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To attain a high dielectric strength and a low threshold voltage for a double-diffused field-effect transistor with an insulated gate, by selectively introducing an impurity through a surface to displace the surface of a pn-junction from the vicinity of the former surface. CONSTITUTION:When a P-type silicon substrate is used, an oxide film 12 is selectively provided on the surface of the substrate 10. The oxide film 12 is used as a mask to firstly produce an N-type semiconductor region 14 and secondly produce a P<+> semiconductor region 15 of smaller depth than a region 2. The oxide film 12 is removed from the part of the region 14, which finally becomes a gate. A gate insulating layer 16 of prescribed thickness is produced on the film-removed part of the region 14. A P-type impurity is introduced at a low concentration through the insulating layer 16 by ion implantation to provide a P-type region 11c'. Since the part 11c' projecting toward the source region 15 is provided on the surface of the region 14, a depletion layer extends on the total area of the part 11c'. The dielectric strength is thus raised.
JP13771878A 1978-11-08 1978-11-08 Field-effect semiconductor device Pending JPS5563876A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13771878A JPS5563876A (en) 1978-11-08 1978-11-08 Field-effect semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13771878A JPS5563876A (en) 1978-11-08 1978-11-08 Field-effect semiconductor device

Publications (1)

Publication Number Publication Date
JPS5563876A true JPS5563876A (en) 1980-05-14

Family

ID=15205191

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13771878A Pending JPS5563876A (en) 1978-11-08 1978-11-08 Field-effect semiconductor device

Country Status (1)

Country Link
JP (1) JPS5563876A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62104068A (en) * 1985-10-30 1987-05-14 Mitsubishi Electric Corp Semiconductor integrated circuit device
JPS63173372A (en) * 1987-01-13 1988-07-16 Nissan Motor Co Ltd Vertical mos transistor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5374385A (en) * 1976-12-15 1978-07-01 Hitachi Ltd Manufacture of field effect semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5374385A (en) * 1976-12-15 1978-07-01 Hitachi Ltd Manufacture of field effect semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62104068A (en) * 1985-10-30 1987-05-14 Mitsubishi Electric Corp Semiconductor integrated circuit device
JPS63173372A (en) * 1987-01-13 1988-07-16 Nissan Motor Co Ltd Vertical mos transistor

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