JPS55111163A - Semiconductor device and manufacturing method thereof - Google Patents

Semiconductor device and manufacturing method thereof

Info

Publication number
JPS55111163A
JPS55111163A JP1926279A JP1926279A JPS55111163A JP S55111163 A JPS55111163 A JP S55111163A JP 1926279 A JP1926279 A JP 1926279A JP 1926279 A JP1926279 A JP 1926279A JP S55111163 A JPS55111163 A JP S55111163A
Authority
JP
Japan
Prior art keywords
electrode
insulating film
conductor layer
insulating
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1926279A
Other languages
Japanese (ja)
Inventor
Atsushi Funada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP1926279A priority Critical patent/JPS55111163A/en
Publication of JPS55111163A publication Critical patent/JPS55111163A/en
Pending legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To prevent the corrosion of an electrode on a semiconductor substrate due to invading moisture or the like and raise humidity resistance, by coating a conductor layer and an insulating layer on the electrode.
CONSTITUTION: An opening 3 is provided through the first insulating film 2 on a semiconductor substrate 1. An electrode 4 of aluminum or the like is bonded on the substrate 1 through the opening 3. The second insulating film 5 is made of SiO2, Si3N4 or the like on the electrode. A conductor layer 8 of aluminum or the like is provided on the second insulating film 5 to face the electrode 4 across the film. The third insulating layer 9 of Al2O3 or the like is provided all over the conductor layer 8 and the second insulating film 5. As a result, a shoulder 7a corresponding to the edge of the electrode 4 is formed with a double construction, a possible crack in the insulating layer 9 cannot reach the electrode 4 and the electrode is protected from corrosion due to invading moisture or the like.
COPYRIGHT: (C)1980,JPO&Japio
JP1926279A 1979-02-20 1979-02-20 Semiconductor device and manufacturing method thereof Pending JPS55111163A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1926279A JPS55111163A (en) 1979-02-20 1979-02-20 Semiconductor device and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1926279A JPS55111163A (en) 1979-02-20 1979-02-20 Semiconductor device and manufacturing method thereof

Publications (1)

Publication Number Publication Date
JPS55111163A true JPS55111163A (en) 1980-08-27

Family

ID=11994517

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1926279A Pending JPS55111163A (en) 1979-02-20 1979-02-20 Semiconductor device and manufacturing method thereof

Country Status (1)

Country Link
JP (1) JPS55111163A (en)

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