JPS5743432A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5743432A
JPS5743432A JP55118409A JP11840980A JPS5743432A JP S5743432 A JPS5743432 A JP S5743432A JP 55118409 A JP55118409 A JP 55118409A JP 11840980 A JP11840980 A JP 11840980A JP S5743432 A JPS5743432 A JP S5743432A
Authority
JP
Japan
Prior art keywords
film
semiconductor device
moisture
protect
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55118409A
Other languages
Japanese (ja)
Inventor
Daijiro Kudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55118409A priority Critical patent/JPS5743432A/en
Publication of JPS5743432A publication Critical patent/JPS5743432A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/137—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being directly on the semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/147—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being multilayered
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/43—Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses

Landscapes

  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To protect a semiconductor device completely from moisture by covering the atmosphere exposed part of a phosphorus silicate glass film formed on the substrate of the device. CONSTITUTION:A silicon oxidized film 2 and an aluminum electrode 3 are formed on a silicon substrate 1, and a phosphorus silicate film 4 is formed on the electrode except an electrode window 6 for insulation. Further, a moisture preventive film 5 including the side A is covered further on the film 4 to protect the film 4. Since phosphorus content contained in the film is in large quantity, the atmosphere exposed entire part of the film 4 having high hygroscopicity is thus covered with the moisture preventive film, thereby obtaining a semiconductor device having excellent durability time.
JP55118409A 1980-08-29 1980-08-29 Semiconductor device Pending JPS5743432A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55118409A JPS5743432A (en) 1980-08-29 1980-08-29 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55118409A JPS5743432A (en) 1980-08-29 1980-08-29 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5743432A true JPS5743432A (en) 1982-03-11

Family

ID=14735926

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55118409A Pending JPS5743432A (en) 1980-08-29 1980-08-29 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5743432A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63173332A (en) * 1987-01-12 1988-07-16 Nec Corp Semiconductor integrated circuit device
JPH02141737A (en) * 1988-11-24 1990-05-31 Canon Inc Rear projection screen and rear projection image display device using the same
EP4016606A1 (en) * 2020-12-16 2022-06-22 STMicroelectronics Pte Ltd. Passivation layer for an integrated circuit device that provides a moisture and proton barrier

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63173332A (en) * 1987-01-12 1988-07-16 Nec Corp Semiconductor integrated circuit device
JPH02141737A (en) * 1988-11-24 1990-05-31 Canon Inc Rear projection screen and rear projection image display device using the same
EP4016606A1 (en) * 2020-12-16 2022-06-22 STMicroelectronics Pte Ltd. Passivation layer for an integrated circuit device that provides a moisture and proton barrier

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