JPS551122A - Field-effect transistor - Google Patents

Field-effect transistor

Info

Publication number
JPS551122A
JPS551122A JP7358778A JP7358778A JPS551122A JP S551122 A JPS551122 A JP S551122A JP 7358778 A JP7358778 A JP 7358778A JP 7358778 A JP7358778 A JP 7358778A JP S551122 A JPS551122 A JP S551122A
Authority
JP
Japan
Prior art keywords
impurity density
voltage
gate
per cubic
cubic centimeter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7358778A
Other languages
English (en)
Inventor
Yasuro Mitsui
Manabu Watase
Michihiro Kobiki
Mutsuyuki Otsubo
Shigeru Mitsui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP7358778A priority Critical patent/JPS551122A/ja
Publication of JPS551122A publication Critical patent/JPS551122A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs

Landscapes

  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP7358778A 1978-06-16 1978-06-16 Field-effect transistor Pending JPS551122A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7358778A JPS551122A (en) 1978-06-16 1978-06-16 Field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7358778A JPS551122A (en) 1978-06-16 1978-06-16 Field-effect transistor

Publications (1)

Publication Number Publication Date
JPS551122A true JPS551122A (en) 1980-01-07

Family

ID=13522582

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7358778A Pending JPS551122A (en) 1978-06-16 1978-06-16 Field-effect transistor

Country Status (1)

Country Link
JP (1) JPS551122A (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55123172A (en) * 1979-03-15 1980-09-22 Nec Corp Schottky-barrier-gate field-effect transistor
JPS593977A (ja) * 1982-06-29 1984-01-10 Fujitsu Ltd 半導体装置
JPS6399579A (ja) * 1986-10-16 1988-04-30 Hitachi Ltd 電界効果トランジスタの製造方法
JPS6476774A (en) * 1987-09-18 1989-03-22 Nec Corp Semiconductor device
JPH03264108A (ja) * 1990-03-13 1991-11-25 Kobe Steel Ltd 高Ａ１含有Ｔｉ合金の熱間押出方法
JPWO2013018580A1 (ja) * 2011-08-01 2015-03-05 株式会社村田製作所 電界効果トランジスタ

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55123172A (en) * 1979-03-15 1980-09-22 Nec Corp Schottky-barrier-gate field-effect transistor
JPS593977A (ja) * 1982-06-29 1984-01-10 Fujitsu Ltd 半導体装置
JPS6399579A (ja) * 1986-10-16 1988-04-30 Hitachi Ltd 電界効果トランジスタの製造方法
JPS6476774A (en) * 1987-09-18 1989-03-22 Nec Corp Semiconductor device
JPH03264108A (ja) * 1990-03-13 1991-11-25 Kobe Steel Ltd 高Ａ１含有Ｔｉ合金の熱間押出方法
JPWO2013018580A1 (ja) * 2011-08-01 2015-03-05 株式会社村田製作所 電界効果トランジスタ
US9099341B2 (en) 2011-08-01 2015-08-04 Murata Manufacturing Co., Ltd. Field effect transistor

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