JPS551122A - Field-effect transistor - Google Patents

Field-effect transistor

Info

Publication number
JPS551122A
JPS551122A JP7358778A JP7358778A JPS551122A JP S551122 A JPS551122 A JP S551122A JP 7358778 A JP7358778 A JP 7358778A JP 7358778 A JP7358778 A JP 7358778A JP S551122 A JPS551122 A JP S551122A
Authority
JP
Japan
Prior art keywords
impurity density
voltage
gate
per cubic
cubic centimeter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7358778A
Other languages
Japanese (ja)
Inventor
Yasuro Mitsui
Manabu Watase
Michihiro Kobiki
Mutsuyuki Otsubo
Shigeru Mitsui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP7358778A priority Critical patent/JPS551122A/en
Publication of JPS551122A publication Critical patent/JPS551122A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs

Landscapes

  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To raise the proof voltage and the output of a field-effect transistor, by making the impurity density of an operating layer as high as 2×1017 or more per cubic centimeter and setting a low impurity density low near the surface of crystal whereon a Scottky junction is produced.
CONSTITUTION: The impurity density near the surface of crystal whereon a Schottky metal is provided is made as relatively low as about 1017 per cubic centimeter. Therefore, the inverse proof voltage of the gate is 20 V or more, and a depletion layer extends to a point A because of the electric field in the Schottky junction when the gate voltage is zero. Because a layer AA' which is really modulated by the gate voltage has an impurity density of 2×1017 to 5×1017 or more per cubic centimeter, the value Gm is very large and the output increases when the drain saturation current is constant. The drain-gate proof voltage in not extremely decreased. The impurity density of the operating layer is made high. The value Gm is raised. The pinch-off voltage is reduced. The output is augmented.
COPYRIGHT: (C)1980,JPO&Japio
JP7358778A 1978-06-16 1978-06-16 Field-effect transistor Pending JPS551122A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7358778A JPS551122A (en) 1978-06-16 1978-06-16 Field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7358778A JPS551122A (en) 1978-06-16 1978-06-16 Field-effect transistor

Publications (1)

Publication Number Publication Date
JPS551122A true JPS551122A (en) 1980-01-07

Family

ID=13522582

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7358778A Pending JPS551122A (en) 1978-06-16 1978-06-16 Field-effect transistor

Country Status (1)

Country Link
JP (1) JPS551122A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55123172A (en) * 1979-03-15 1980-09-22 Nec Corp Schottky-barrier-gate field-effect transistor
JPS593977A (en) * 1982-06-29 1984-01-10 Fujitsu Ltd Semiconductor device
JPS6399579A (en) * 1986-10-16 1988-04-30 Hitachi Ltd Manufacture of field effect transistor
JPS6476774A (en) * 1987-09-18 1989-03-22 Nec Corp Semiconductor device
JPH03264108A (en) * 1990-03-13 1991-11-25 Kobe Steel Ltd Method for hot-extruding al containing ti alloy
JPWO2013018580A1 (en) * 2011-08-01 2015-03-05 株式会社村田製作所 Field effect transistor

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55123172A (en) * 1979-03-15 1980-09-22 Nec Corp Schottky-barrier-gate field-effect transistor
JPS593977A (en) * 1982-06-29 1984-01-10 Fujitsu Ltd Semiconductor device
JPS6399579A (en) * 1986-10-16 1988-04-30 Hitachi Ltd Manufacture of field effect transistor
JPS6476774A (en) * 1987-09-18 1989-03-22 Nec Corp Semiconductor device
JPH03264108A (en) * 1990-03-13 1991-11-25 Kobe Steel Ltd Method for hot-extruding al containing ti alloy
JPWO2013018580A1 (en) * 2011-08-01 2015-03-05 株式会社村田製作所 Field effect transistor
US9099341B2 (en) 2011-08-01 2015-08-04 Murata Manufacturing Co., Ltd. Field effect transistor

Similar Documents

Publication Publication Date Title
JPS5710266A (en) Mis field effect semiconductor device
JPS5316581A (en) Insulated gate type field effect transistor
JPS551122A (en) Field-effect transistor
JPS55111171A (en) Field-effect semiconductor device
JPS5567160A (en) Semiconductor memory storage
JPS5220769A (en) Longitudinal semi-conductor unit
JPS54101285A (en) Dual gate field effect transistor
JPS5713758A (en) Semiconductor device
JPS53125777A (en) Manufacture for field effect transistor
JPS57121271A (en) Field effect transistor
JPS56146276A (en) Insulating gate type field-effect transistor
JPS572579A (en) Manufacture of junction type field effect transistor
JPS538080A (en) Insulated gate type field effect transistor
JPS5673468A (en) Mos type semiconductor device
JPS5577177A (en) Mos type semiconductor device
JPS54107679A (en) Semiconductor device
JPS55141760A (en) Field effect transistor
JPS572576A (en) Semiconductor device
JPS54161892A (en) Junction-type field effect transistor
JPS54124688A (en) Insulating gate field effect transistor
JPS5287990A (en) Semiconductor device
JPS52144980A (en) Sos semiconductor device
JPS5426668A (en) Field effect transistor of junction gate type
JPS54148384A (en) Power-use high dielectric strength field effect transistor
JPS5252581A (en) Semiconductor device