JPS5511330A - Semiconductor device having continuous junction - Google Patents

Semiconductor device having continuous junction

Info

Publication number
JPS5511330A
JPS5511330A JP8346878A JP8346878A JPS5511330A JP S5511330 A JPS5511330 A JP S5511330A JP 8346878 A JP8346878 A JP 8346878A JP 8346878 A JP8346878 A JP 8346878A JP S5511330 A JPS5511330 A JP S5511330A
Authority
JP
Japan
Prior art keywords
semiconductor
silicon
boundary level
single crystal
hydrogen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8346878A
Other languages
Japanese (ja)
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP8346878A priority Critical patent/JPS5511330A/en
Priority to US06/055,650 priority patent/US4254429A/en
Publication of JPS5511330A publication Critical patent/JPS5511330A/en
Pending legal-status Critical Current

Links

Landscapes

  • Light Receiving Elements (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To make it possible to shift energy band continuously or vertually continuously, by adding to a non-single crystal semiconductor a material that neutralizes the boundary level.
CONSTITUTION: Amorphous or polycrystalline non-single crystal film is formed on a semiconductor or insulator, by using a material that becomes a semiconductor, such as silicon and silicified gas. Next, on top of this, non-single crystal film consisting of silicon, to which hydrogen, heavy hydrogen, or a halogen compound, such as of chlorine is added. These substances bond with the unpaired bonding hands of silicon, suppress the occurrence of re-bonding center and neutralizes the boundary level. Further, carbon, nitrogen, and oxygen are dispersed and added to the semiconductor. As a result, there is no boundary level, and even if it is placed adjacent to a semiconductor having a different energy band, it is possible to suppress the occurrence of a boundary level due to a dissimilar lattices. For semiconductor materials, germanium, hydrogen carbide, a compound semiconductor, besides silicon, may be used.
COPYRIGHT: (C)1980,JPO&Japio
JP8346878A 1978-07-08 1978-07-08 Semiconductor device having continuous junction Pending JPS5511330A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP8346878A JPS5511330A (en) 1978-07-08 1978-07-08 Semiconductor device having continuous junction
US06/055,650 US4254429A (en) 1978-07-08 1979-07-09 Hetero junction semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8346878A JPS5511330A (en) 1978-07-08 1978-07-08 Semiconductor device having continuous junction

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP7025279A Division JPS5511397A (en) 1979-06-05 1979-06-05 Semiconductor device with continuous connection and its production method

Publications (1)

Publication Number Publication Date
JPS5511330A true JPS5511330A (en) 1980-01-26

Family

ID=13803294

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8346878A Pending JPS5511330A (en) 1978-07-08 1978-07-08 Semiconductor device having continuous junction

Country Status (1)

Country Link
JP (1) JPS5511330A (en)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5780781A (en) * 1980-11-08 1982-05-20 Mitsubishi Electric Corp Phototransistor
JPS5837648A (en) * 1981-07-17 1983-03-04 プラズマ・フイジクス・コ−ポレ−シヨン Glow discharge method and apparatus and photosensitive body device prepared thereby
JPS59211267A (en) * 1983-05-17 1984-11-30 Toshiba Corp Hetero junction bipolar transistor
JPS61100930A (en) * 1984-10-24 1986-05-19 Hitachi Ltd Position detection method
JPS62170968A (en) * 1986-01-23 1987-07-28 Hitachi Ltd Amorphous silicon electrophotographic sensitive body and its production
JPS63107620U (en) * 1986-12-27 1988-07-11
JPH0275024U (en) * 1988-11-29 1990-06-08
US5262350A (en) * 1980-06-30 1993-11-16 Semiconductor Energy Laboratory Co., Ltd. Forming a non single crystal semiconductor layer by using an electric current
JPH06282087A (en) * 1993-12-22 1994-10-07 Semiconductor Energy Lab Co Ltd Electronic exposure device
JPH06282088A (en) * 1993-12-22 1994-10-07 Semiconductor Energy Lab Co Ltd Production of photosensitive body
JPH07202254A (en) * 1993-12-28 1995-08-04 Nec Corp Semiconductor photodetector
US5591987A (en) * 1980-03-03 1997-01-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor MIS field effect transistor with semi-amorphous semiconductor material
US5859443A (en) * 1980-06-30 1999-01-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6355941B1 (en) * 1980-06-30 2002-03-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6900463B1 (en) 1980-06-30 2005-05-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2007311475A (en) * 2006-05-17 2007-11-29 Univ Of Tokushima Semiconductor photodetector

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5216990A (en) * 1975-07-28 1977-02-08 Rca Corp Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5216990A (en) * 1975-07-28 1977-02-08 Rca Corp Semiconductor device

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5591987A (en) * 1980-03-03 1997-01-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor MIS field effect transistor with semi-amorphous semiconductor material
US6900463B1 (en) 1980-06-30 2005-05-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6355941B1 (en) * 1980-06-30 2002-03-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US5262350A (en) * 1980-06-30 1993-11-16 Semiconductor Energy Laboratory Co., Ltd. Forming a non single crystal semiconductor layer by using an electric current
US5859443A (en) * 1980-06-30 1999-01-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JPS5780781A (en) * 1980-11-08 1982-05-20 Mitsubishi Electric Corp Phototransistor
JPS5837648A (en) * 1981-07-17 1983-03-04 プラズマ・フイジクス・コ−ポレ−シヨン Glow discharge method and apparatus and photosensitive body device prepared thereby
JPS59211267A (en) * 1983-05-17 1984-11-30 Toshiba Corp Hetero junction bipolar transistor
JPS61100930A (en) * 1984-10-24 1986-05-19 Hitachi Ltd Position detection method
JPS62170968A (en) * 1986-01-23 1987-07-28 Hitachi Ltd Amorphous silicon electrophotographic sensitive body and its production
JPS63107620U (en) * 1986-12-27 1988-07-11
JPH0275024U (en) * 1988-11-29 1990-06-08
JPH06282088A (en) * 1993-12-22 1994-10-07 Semiconductor Energy Lab Co Ltd Production of photosensitive body
JPH06282087A (en) * 1993-12-22 1994-10-07 Semiconductor Energy Lab Co Ltd Electronic exposure device
JPH07202254A (en) * 1993-12-28 1995-08-04 Nec Corp Semiconductor photodetector
JP2007311475A (en) * 2006-05-17 2007-11-29 Univ Of Tokushima Semiconductor photodetector

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