JPS5645897A - Manufacture of silicon carbide crystal - Google Patents

Manufacture of silicon carbide crystal

Info

Publication number
JPS5645897A
JPS5645897A JP12127979A JP12127979A JPS5645897A JP S5645897 A JPS5645897 A JP S5645897A JP 12127979 A JP12127979 A JP 12127979A JP 12127979 A JP12127979 A JP 12127979A JP S5645897 A JPS5645897 A JP S5645897A
Authority
JP
Japan
Prior art keywords
layer
substrate
sic
stand
temp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12127979A
Other languages
Japanese (ja)
Other versions
JPS6121197B2 (en
Inventor
Toshiki Inooku
Takeshi Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP12127979A priority Critical patent/JPS5645897A/en
Priority to DE3002671A priority patent/DE3002671C2/en
Publication of JPS5645897A publication Critical patent/JPS5645897A/en
Priority to US06/369,911 priority patent/US4582561A/en
Publication of JPS6121197B2 publication Critical patent/JPS6121197B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: To continuously grow an SiC tertiary layer by mounting an Si substrate with a primary layer of polycrystal SiC formed on a stand with the layer surface downward, melting the substrate to form an SiC secondary layer, and feeding starting materials from a vapor phase.
CONSTITUTION: A surface layer of Si substrate 2 on sample stand 26 is removed by etching with HCl-H2 mixed gas, and the temp. of substrate 2 is set to the m.p. or below, preferably 1,200W1,300°C, SiH2Cl2 and C3H8 as starting material gases are fed together with H2 gas as carrier gas to form SiC primary layer 4 of polycrystal SiC on substrate 2. After dropping the temp. stand 26 is taken out to invert substrate 2 so that layer 4 contacts with stand 26. Stand 26 is placed in reaction tube 22, heated to about 1,500°C in an H2 atmosphere to melt substrate 2, maintained at the temp. for a predetermined time to form single crystal SiC secondary layer 14, and heated to about 1,700°C under reduced pressure to reduce the Si melt by evaporation. SiH2Cl2, C3H8 and H2 are then fed by a predetermined amount each under reduced pressure to grow high temp. CVD-SiC layer (tertiary layer) 15.
COPYRIGHT: (C)1981,JPO&Japio
JP12127979A 1979-01-25 1979-09-19 Manufacture of silicon carbide crystal Granted JPS5645897A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP12127979A JPS5645897A (en) 1979-09-19 1979-09-19 Manufacture of silicon carbide crystal
DE3002671A DE3002671C2 (en) 1979-01-25 1980-01-25 Process for making a silicon carbide substrate
US06/369,911 US4582561A (en) 1979-01-25 1982-04-19 Method for making a silicon carbide substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12127979A JPS5645897A (en) 1979-09-19 1979-09-19 Manufacture of silicon carbide crystal

Publications (2)

Publication Number Publication Date
JPS5645897A true JPS5645897A (en) 1981-04-25
JPS6121197B2 JPS6121197B2 (en) 1986-05-26

Family

ID=14807313

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12127979A Granted JPS5645897A (en) 1979-01-25 1979-09-19 Manufacture of silicon carbide crystal

Country Status (1)

Country Link
JP (1) JPS5645897A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63283014A (en) * 1987-04-28 1988-11-18 Sharp Corp Silicon carbide semiconductor element
US5471946A (en) * 1992-10-13 1995-12-05 Cs Halbleiter-Und Solartechnologie Gmbh Method for producing a wafer with a monocrystalline silicon carbide layer
JP2002530266A (en) * 1998-11-25 2002-09-17 サントル、ナショナール、ド、ラ、ルシェルシュ、シアンティフィク、（セーエヌエルエス） Method of growing crystal on substrate
WO2018180013A1 (en) * 2017-03-28 2018-10-04 三菱電機株式会社 Silicon carbide substrate, method for producing silicon carbide substrate, and method for producing silicon carbide semiconductor device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63283014A (en) * 1987-04-28 1988-11-18 Sharp Corp Silicon carbide semiconductor element
US5471946A (en) * 1992-10-13 1995-12-05 Cs Halbleiter-Und Solartechnologie Gmbh Method for producing a wafer with a monocrystalline silicon carbide layer
JP2002530266A (en) * 1998-11-25 2002-09-17 サントル、ナショナール、ド、ラ、ルシェルシュ、シアンティフィク、（セーエヌエルエス） Method of growing crystal on substrate
WO2018180013A1 (en) * 2017-03-28 2018-10-04 三菱電機株式会社 Silicon carbide substrate, method for producing silicon carbide substrate, and method for producing silicon carbide semiconductor device
JPWO2018180013A1 (en) * 2017-03-28 2019-11-07 三菱電機株式会社 Silicon carbide substrate, method for manufacturing silicon carbide substrate, and method for manufacturing silicon carbide semiconductor device
CN110462112A (en) * 2017-03-28 2019-11-15 三菱电机株式会社 Silicon carbide substrate, method of manufacturing silicon carbide substrate, and method of manufacturing silicon carbide semiconductor device

Also Published As

Publication number Publication date
JPS6121197B2 (en) 1986-05-26

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