JPS5511331A - Method of manufacturing semiconductor integrated circuit - Google Patents

Method of manufacturing semiconductor integrated circuit

Info

Publication number
JPS5511331A
JPS5511331A JP8352378A JP8352378A JPS5511331A JP S5511331 A JPS5511331 A JP S5511331A JP 8352378 A JP8352378 A JP 8352378A JP 8352378 A JP8352378 A JP 8352378A JP S5511331 A JPS5511331 A JP S5511331A
Authority
JP
Japan
Prior art keywords
thyristors
integrated circuit
radiation
semiconductor integrated
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8352378A
Other languages
Japanese (ja)
Other versions
JPS6220688B2 (en
Inventor
Shigeru Takahashi
Kiyoshi Tsukuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP8352378A priority Critical patent/JPS5511331A/en
Publication of JPS5511331A publication Critical patent/JPS5511331A/en
Publication of JPS6220688B2 publication Critical patent/JPS6220688B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Thyristors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE: To make uniform the dispersion of lifetimes of elements, by exposing them to radiation from the main surface of a base after a PN junction ifs formed in a semiconductor integrated circuit.
CONSTITUTION: Under the same diffusion process, inner A thyristors 20W27 and outer B thyristors 30W37 are formed. Here, A thyristors 20W27 and B thyristors 30W37 form bidirectional thyristors, with 20 and 30, 21 and 31...connected in inverse parallel. Next, they are exposed to radiation, such as electron beam. In the relation of the position of the chip, the lifetime of the PN junction and the value of hFE of each thyristor made of the same structure and under the same diffusion process, those elements in the neighborhood of chip ends tend to have larger values. But, by radiation, such dispersions are made uniform. This is not confined to thyristor-array integrated circuits but can be applied to integrated circuit devices containing PNP transistor array and other diode array.
COPYRIGHT: (C)1980,JPO&Japio
JP8352378A 1978-07-11 1978-07-11 Method of manufacturing semiconductor integrated circuit Granted JPS5511331A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8352378A JPS5511331A (en) 1978-07-11 1978-07-11 Method of manufacturing semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8352378A JPS5511331A (en) 1978-07-11 1978-07-11 Method of manufacturing semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPS5511331A true JPS5511331A (en) 1980-01-26
JPS6220688B2 JPS6220688B2 (en) 1987-05-08

Family

ID=13804831

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8352378A Granted JPS5511331A (en) 1978-07-11 1978-07-11 Method of manufacturing semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS5511331A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5792860A (en) * 1980-12-01 1982-06-09 Hitachi Ltd Manufacture of semiconductor integrated circuit device
JP2002349651A (en) * 2001-05-25 2002-12-04 Honda Motor Co Ltd Belt tension mechanism
US6773968B1 (en) * 1998-05-13 2004-08-10 Micron Technology, Inc. High density planar SRAM cell using bipolar latch-up and gated diode breakdown

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5131190A (en) * 1974-09-10 1976-03-17 Matsushita Electric Industrial Co Ltd

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5131190A (en) * 1974-09-10 1976-03-17 Matsushita Electric Industrial Co Ltd

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5792860A (en) * 1980-12-01 1982-06-09 Hitachi Ltd Manufacture of semiconductor integrated circuit device
US6773968B1 (en) * 1998-05-13 2004-08-10 Micron Technology, Inc. High density planar SRAM cell using bipolar latch-up and gated diode breakdown
JP2002349651A (en) * 2001-05-25 2002-12-04 Honda Motor Co Ltd Belt tension mechanism

Also Published As

Publication number Publication date
JPS6220688B2 (en) 1987-05-08

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