JPS5511331A - Method of manufacturing semiconductor integrated circuit - Google Patents

Method of manufacturing semiconductor integrated circuit

Info

Publication number: JPS5511331A
Authority: JP; Japan
Prior art keywords: thyristors; integrated circuit; radiation; semiconductor integrated; junction
Prior art date: 1978-07-11
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

JP8352378A

Other languages

English (en)

Other versions

JPS6220688B2 (ja

Inventor

Shigeru Takahashi

Kiyoshi Tsukuda

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Hitachi Ltd

Original Assignee

Hitachi Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1978-07-11

Filing date

1978-07-11

Publication date

1980-01-26

1978-07-11 Application filed by Hitachi Ltd filed Critical Hitachi Ltd

1978-07-11 Priority to JP8352378A priority Critical patent/JPS5511331A/ja

1980-01-26 Publication of JPS5511331A publication Critical patent/JPS5511331A/ja

1987-05-08 Publication of JPS6220688B2 publication Critical patent/JPS6220688B2/ja

Status Granted legal-status Critical Current

Links

239000004065 semiconductor Substances 0.000 title abstract 2
238000004519 manufacturing process Methods 0.000 title 1
230000005855 radiation Effects 0.000 abstract 3
238000009792 diffusion process Methods 0.000 abstract 2
239000006185 dispersion Substances 0.000 abstract 2
230000002457 bidirectional effect Effects 0.000 abstract 1
238000010894 electron beam technology Methods 0.000 abstract 1

Landscapes

Thyristors (AREA)
Bipolar Integrated Circuits (AREA)

JP8352378A 1978-07-11 1978-07-11 Method of manufacturing semiconductor integrated circuit Granted JPS5511331A (en)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP8352378A JPS5511331A (en)	1978-07-11	1978-07-11	Method of manufacturing semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP8352378A JPS5511331A (en)	1978-07-11	1978-07-11	Method of manufacturing semiconductor integrated circuit

Publications (2)

Publication Number	Publication Date
JPS5511331A true JPS5511331A (en)	1980-01-26
JPS6220688B2 JPS6220688B2 (ja)	1987-05-08

Family

ID=13804831

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP8352378A Granted JPS5511331A (en)	1978-07-11	1978-07-11	Method of manufacturing semiconductor integrated circuit

Country Status (1)

Country	Link
JP (1)	JPS5511331A (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5792860A (en) *	1980-12-01	1982-06-09	Hitachi Ltd	Manufacture of semiconductor integrated circuit device
JP2002349651A (ja) *	2001-05-25	2002-12-04	Honda Motor Co Ltd	ベルトテンション機構
US6773968B1 (en) *	1998-05-13	2004-08-10	Micron Technology, Inc.	High density planar SRAM cell using bipolar latch-up and gated diode breakdown

Citations (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5131190A (ja) *	1974-09-10	1976-03-17	Matsushita Electric Industrial Co Ltd

1978
- 1978-07-11 JP JP8352378A patent/JPS5511331A/ja active Granted

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5131190A (ja) *	1974-09-10	1976-03-17	Matsushita Electric Industrial Co Ltd

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5792860A (en) *	1980-12-01	1982-06-09	Hitachi Ltd	Manufacture of semiconductor integrated circuit device
US6773968B1 (en) *	1998-05-13	2004-08-10	Micron Technology, Inc.	High density planar SRAM cell using bipolar latch-up and gated diode breakdown
JP2002349651A (ja) *	2001-05-25	2002-12-04	Honda Motor Co Ltd	ベルトテンション機構

Also Published As

Publication number	Publication date
JPS6220688B2 (ja)	1987-05-08

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