JPS55117264A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS55117264A
JPS55117264A JP2376479A JP2376479A JPS55117264A JP S55117264 A JPS55117264 A JP S55117264A JP 2376479 A JP2376479 A JP 2376479A JP 2376479 A JP2376479 A JP 2376479A JP S55117264 A JPS55117264 A JP S55117264A
Authority
JP
Japan
Prior art keywords
wires
film
polysilicon
selectively
resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2376479A
Other languages
Japanese (ja)
Inventor
Kenji Okada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP2376479A priority Critical patent/JPS55117264A/en
Publication of JPS55117264A publication Critical patent/JPS55117264A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To improve the integrity of a semiconductor device by laminating selectively a thin metallic film on a thermal oxide film of wiring or resistance surface of a polysilicon thin film provided on an insulating film to reduce the resistance value thereof. CONSTITUTION:An oxide film 32 and a polysilicon thin film 33 are laminated on a silicon substrate 31, and heated, and coated with an oxide film 34 thereon. With a nitride film as a mask the substrate is selectively oxidized to form wires 35, 35' and resistance portion 36 with polysilicon 33. Then, the film 34 is selectively removed on the wires, platinum is coated thereon, heated, and formed with a silicon platinum 37 thereon. Then, wires 38 of aluminum thin film are selectively formed thereon and heated to complete it. The wires 38 reduces the resistance of the polysilicon wires 35, 35'. The wires 35, 35' are connected across the polysilicon resistor 36. The resistance value of the large current wire is lowered by the thin film 38. The aluminum wire can be crossed with polysilicon resistor to remarkably improve the integrity of the semiconductor device.
JP2376479A 1979-03-01 1979-03-01 Semiconductor device Pending JPS55117264A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2376479A JPS55117264A (en) 1979-03-01 1979-03-01 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2376479A JPS55117264A (en) 1979-03-01 1979-03-01 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS55117264A true JPS55117264A (en) 1980-09-09

Family

ID=12119398

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2376479A Pending JPS55117264A (en) 1979-03-01 1979-03-01 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS55117264A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5242032A (en) * 1975-09-29 1977-04-01 Hitachi Ltd Data processing unit
JPS5397791A (en) * 1977-02-07 1978-08-26 Nec Corp Production of semiconductor integrated circuit device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5242032A (en) * 1975-09-29 1977-04-01 Hitachi Ltd Data processing unit
JPS5397791A (en) * 1977-02-07 1978-08-26 Nec Corp Production of semiconductor integrated circuit device

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